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Jingdao Microelectronics BZT52C11W
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic BZT52C11W
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- BZT52C11W
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- (Zzk)
- 150Ω
- (Zzt)
- 20Ω
- Electronic Component
- BM0259012037
- Diode
- 1
- Current(Ir)
- 100nA@8V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 10.4V~11.6V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C11W 产品概述
一、产品简介
BZT52C11W 是晶导微电子推出的一款独立式稳压二极管（齐纳二极管），标称稳压值为 11V，采用 SOD-123 小封装，适用于空间受限的低功耗稳压、基准电压及浪涌吸收场合。器件在反向击穿区工作，可提供稳定的电压参考并兼具过压钳位功能，适合消费电子、通信模块、传感器接口及电源管理板等应用。
二、主要电气参数与特性
- 稳压值（标称）：11V
- 稳压值范围：10.4V ～ 11.6V
- 反向漏电流 Ir：100nA @ 8V（典型测试条件）
- 最大耗散功率 Pd：500mW（基于良好散热条件）
- 动态阻抗 Zzt：20Ω（测试点相关动态阻抗）
- 峰值/高阻抗 Zzk：150Ω（低电流区动态阻抗）
- 工作结温范围：-55℃ ～ +150℃
该器件具有低漏电、高稳压精度和较低的动态阻抗，在中低电流工作点下能保持较稳定的参考电压。
三、热性能与可靠性
由于 SOD-123 为小型封装，器件的热阻和功耗受 PCB 散热条件影响显著。标称耗散功率 500mW 通常在推荐的 PCB 铜箔以及良好环境条件下才能实现，建议按温度降额使用：随环境温度上升应降额使用以保证结温不超过 150℃。长期工作应考虑热循环和焊接应力对可靠性的影响。
四、典型应用场景
- 低功耗稳压与电压基准：为模拟电路或 ADC/DAC 提供参考电压源。
- 过压/浪涌保护：对输入端或信号线进行钳位保护，防止瞬态电压损坏后端电路。
- 功率管理与电源监控：配合限流电阻构成简单的稳压器为外围器件供电。
- 通信与消费类电子：适用于模块化设计中需要稳定电压但功耗受限的场合。
五、选型与焊接提示
- 若电路中工作电流较高或需更低稳压阻抗，应选用更大功率或更低 Zt 的型号；若对稳压精度有严格要求，留意器件的稳压值范围（10.4V～11.6V）。
- 设计时在稳压二极管前串联限流电阻以控制工作电流和功耗；计算时需考虑最大环境温度和 PCB 散热能力。
- 焊接时遵循 SOD-123 的回流温度规范，避免超时高温造成封装应力；清洁助焊残留并避免长时间高温暴露。
六、封装与订购信息
- 封装：SOD-123，适合自动贴装与回流焊工艺。
- 品牌：晶导微电子（BZT 系列）
- 型号：BZT52C11W，常见为卷带包装，适合量产 SMT 贴装。
购买或替换时请确认稳压值、功耗、动态阻抗与工作温度以满足实际应用需求。若需更详细的参数曲线或封装尺寸图，建议参考晶导微电子官方数据手册。
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