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Jingdao Microelectronics B5817W
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic B5817W
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- B5817W
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0228061360
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 1mA@20V
- (Vf)
- 450mV@1A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
B5817W 产品概述
一、概述
B5817W 是晶导微电子面向低压快速整流与保护应用推出的一款肖特基二极管，采用 SOD-123 小尺寸封装，额定整流电流 1A，直流反向耐压 20V。器件工作结温范围为 -55℃ 到 +125℃，适用于便携式和板载电源等空间受限、对正向压降有较高要求的场合。
二、主要性能参数
- 正向压降 (Vf)：450mV @ 1A（低压降，有利于提高系统效率）
- 额定整流电流：1A（连续）
- 非重复峰值浪涌电流 (Ifsm)：9A（短时浪涌承受能力强）
- 直流反向耐压 (Vr)：20V（适合低压电源环节）
- 反向电流 (Ir)：1mA @ 20V（中等漏电，需在低漏电场合注意）
- 工作结温：-55℃ ~ +125℃
三、特点与优势
- 低正向压降：450mV@1A 的典型值比传统整流二极管更低，降低功耗与热量产生。
- 瞬态耐受能力好：9A 的非重复峰值浪涌电流能吸收启动或短路瞬态能量，提升可靠性。
- 小体积封装：SOD-123 有利于高密度布局与自动贴装，适合消费类电子与通信设备。
- 宽温度范围：满足工业级温度要求，可靠性好。
四、典型应用
- 开关电源输出整流与续流二极管
- 电池与电源的反向保护、反向续流
- USB/移动设备供电路径降压优化
- 直流母线与低压配电系统的瞬态保护
五、封装与热管理
SOD-123 小封装带来占板面积小的优势，但热阻较大，长时间 1A 工作时需注意散热：建议缩短引线、增大铜箔面积或与散热垫配合使用以降低结温并确保可靠运行。
六、使用建议与注意事项
- 在高温或持续满载工况下，应进行电流降额以防结温超限。
- 反向漏电 Ir 在 20V 时约 1mA，若用于超低功耗电路请评估漏电对系统的影响。
- 峰值浪涌 Ifsm 为非重复能力，设计时不能作为常态过载使用。
- 贴装与回流焊请遵循厂商推荐的工艺参数，避免过热导致器件性能退化。
七、结语
B5817W 以其低正向压降、小体积和良好的浪涌承受能力，适合中低压、高密度电源设计与保护场景。选型时请参照晶导微电子提供的完整数据表与应用说明，结合系统热设计与漏电要求进行综合评估。
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