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Jingdao Microelectronics MBR2060DT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic MBR2060DT
- Type
- Jingdao Microelectronics
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- MBR2060DT
- Electronic Component
- 1
- Package
- TO-252-2
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.468g
- Electronic Component
- 1
- Electronic Component
- BM0227742689
- Current
- 20A
- Diode
- 1
- Current(Ir)
- 100uA@60V
- (Vf)
- 750mV@10A
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage Rating(Vr)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBR2060DT肖特基二极管产品概述
一、产品身份与品牌基础
MBR2060DT是晶导微电子推出的1对共阴极肖特基整流二极管，属于中小功率肖特基器件范畴。型号命名中“20”对应连续整流电流（20A），“60”对应直流反向耐压（60V），是针对效率、紧凑性及可靠性需求设计的通用型规格，广泛适配各类电子设备的整流/续流场景。
二、核心参数与技术规格
MBR2060DT的参数明确了性能边界，关键指标如下：
- 电气特性：
正向压降（Vf）典型值750mV@10A（远低于普通硅二极管的1V+），导通损耗低；直流反向耐压（Vr）60V，反向漏电流（Ir）仅100μA@60V（漏电流小且稳定）；连续整流电流（Io）20A（直流），非重复峰值浪涌电流（Ifsm）达150A（可抵御瞬间大电流冲击）。 - 物理特性：
采用TO-252-2贴片封装，尺寸紧凑（约7.6mm×6.4mm×2.3mm），兼容自动化表面贴装（SMT）工艺，同时具备良好的散热能力，满足中小功率应用的热管理需求。
三、典型应用场景
MBR2060DT的参数特性使其适配多类电子设备，核心应用包括：
- 开关电源输出整流：如笔记本适配器、LED驱动电源、小型UPS等，低Vf特性可提升电源转换效率；
- DC-DC转换器续流：降压/升压DC-DC电路中作为续流管，肖特基的快速恢复特性配合低导通压降，优化电路效率；
- 车载电子辅助电路：车载充电系统、车灯控制电路等，150A浪涌能力可应对汽车启动时的瞬间大电流；
- 小型家电与工业控制：电磁炉、小型变频器的整流/续流环节，满足中小功率下的可靠性需求；
- 过流保护辅助：配合保险丝实现电路过流时的快速响应（肖特基恢复时间短）。
四、技术优势与应用价值
与同规格普通硅二极管相比，MBR2060DT的核心优势在于：
- 低损耗高效率：750mV正向压降比硅二极管降低约30%，相同电流下导通损耗减少，适合节能型产品；
- 共阴极配置灵活：1对共阴极结构可直接用于双路整流（如全波整流简化方案）或双路续流，减少外部元件；
- 耐冲击可靠性：150A非重复浪涌能力，可抵御电路启动、负载突变等瞬间大电流，提升整机可靠性；
- 贴装适配性强：TO-252-2封装体积小、重量轻，兼容现有SMT生产线，便于小型化设备布局。
五、选型与使用注意事项
为确保稳定工作，需注意以下几点：
- 电压匹配：电路峰值电压需低于60V反向耐压，避免反向击穿；
- 电流与散热：连续工作电流不超过20A（直流），需配合散热片或PCB铜箔散热，防止过热；
- 浪涌限制：150A为单次非重复浪涌，不可持续/重复施加，需通过电路限制浪涌次数；
- 焊接规范：回流焊峰值温度≤260℃（时间≤10s），避免焊接损伤器件。
总结：MBR2060DT以低损耗、高可靠性、紧凑封装为核心优势，覆盖中小功率电源、车载电子等多领域，是替代普通硅二极管、提升电路效率的理想选择。
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