WMSIC Electronic Components

Jingdao Microelectronics MBR1040DT

ModelMBR1040DT
PackageTO-252-2
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic MBR1040DT
Type
Jingdao Microelectronics
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
MBR1040DT
Electronic Component
1
Package
TO-252-2
Electronic Component
Schottky Diode
Electronic Component
0.464g
Electronic Component
1
Electronic Component
BM0264454956
Current
10A
Diode
1
Current(Ir)
100uA@40V
(Vf)
700mV@5A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
2500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MBR1040DT 产品概述

一、产品简介

MBR1040DT 是晶导微电子推出的一款功率肖特基整流二极管,双芯片封装为一对共阴极(common cathode),适用于中高电流、低压降的整流与保护场合。器件在 5A 工作点的正向压降仅约 700mV,具有快速恢复、低正向压降和较小反向漏电的特点,适合开关电源、整流桥、续流二极管与反向保护等应用。

二、主要电气特性

  • 正向压降 (Vf):约 0.7V @ IF=5A(单芯片测);低压降可减少导通损耗。
  • 直流反向耐压 (Vr):40V,适用于低压电源与电池系统。
  • 连续整流电流:10A(良好散热条件下),适合中大电流整流应用。
  • 峰值非重复浪涌电流 (Ifsm):100A(单次峰值),满足启动或短时冲击电流需求。
  • 反向漏电流 (Ir):100μA @ 40V(典型或上限值),在高温下会增大;适用于对漏电要求不是极端苛刻的场合。
  • 工作结温范围:-55℃ ~ +150℃,适应工业级温度要求。

三、封装与机械特点

  • 封装形式:TO-252-2(DPAK 类),表面贴装,便于自动化装配。
  • 热性能:TO-252-2 通过底部散热焊盘与 PCB 散热,实际散热能力依赖于焊盘面积与过孔数;充分铺铜并引入热过孔能显著降低结温。
  • 引脚配置:一对共阴极,便于构建半桥或整流桥电路,减小系统占板面积。

四、典型应用场景

  • 开关电源输出整流与续流二极管。
  • 充电器与电池管理系统的低压整流与反向保护。
  • 汽车电子(低压子系统)、工业电源与电机驱动的自由轮整流。
  • 高频整流与功率模块中替代普通快恢复二极管以降低功耗。

五、使用与布局建议

  • 散热设计:在接近最大整流电流工作时,需在 PCB 上配备充足的散热铜箔及多孔过孔,将热流引导至散热层或散热片。
  • 布线要求:正负极短且粗,减小串联电阻与电感;靠近负载或电源端放置以减少回路面积。
  • 温度影响:反向漏电随温度上升显著增加,长时间高温工作需考虑电流与功耗的降额。
  • 浪涌保护:Ifsm 为非重复峰值,若存在频繁冲击或反复浪涌,应增加软起动电路或选择更高浪涌能力器件。
  • 并联注意:若通过并联提高电流能力,应确保电流分享机制(如匹配 Vf 或串接限流)以防单颗过载。

六、可靠性与选型提示

MBR1040DT 在工业温度范围内可长期稳定工作,但在具体设计中需关注散热、反向漏电与浪涌能力。对于对正向压降要求更低或反向耐压更高的特殊场合,可比较同类不同 Vf/Vr 等级的肖特基器件以优化效率与可靠性。晶导微电子的该型号在中低压高电流整流领域性价比高,适合量产与工业级产品应用。

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