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Jingdao Microelectronics MM3Z3V3
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic MM3Z3V3
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- MM3Z3V3
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzt)
- 130Ω
- Electronic Component
- BM0226518981
- Diode
- 1
- Current(Ir)
- 20uA@1V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 3.1V~3.5V
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MM3Z3V3 产品概述
一、产品简介
MM3Z3V3 是晶导微电子推出的一款独立式稳压二极管，标称稳压值 3.3V（实际稳压范围 3.1V～3.5V），采用 SOD-323 小封装，适用于空间受限与便携式电子设备。器件工作结温范围宽泛（-55℃～+150℃），在工业与消费类环境均能稳定工作。
二、主要电气参数
- 稳压（标称）：3.3V；稳压范围：3.1V～3.5V
- 反向电流 Ir：20 μA @ VR=1V（低漏电流特性，适合低功耗电路）
- 耗散功率 Pd：200 mW（注意环境温度与散热条件）
- 结阻抗 Zzt：130 Ω（影响动态稳压能力与瞬态响应）
- 封装：SOD-323（独立式贴片），品牌：晶导微电子
三、典型应用场景
适合用作参考电压源、过压保护、去耦后的小功率稳压、信号线保护与分压器的稳定化处理。典型应用包括物联网终端、便携仪表、消费电子微模块以及低功耗传感器节点等。
四、设计与使用建议
- 偏置与稳压电流：为获得稳定的 3.3V 输出，需保证二极管在适当的反向电流区间工作。考虑到 Ir=20 μA 在 1V 时，实际应用中应根据负载与供电电压设计限流电阻以设置工作电流。
- 热管理与功率限制：Pd=200 mW 为器件最大耗散能力，实际使用中应按环境温度进行降额；在高温或持续功耗场景下建议增加散热面积或改用大功率封装。
- 抑制噪声与瞬态：由于结阻抗较高（Zzt=130 Ω），在有瞬态或低频噪声要求的电路中，靠近二极管并联适当的旁路电容（如 0.1 μF 至 1 μF）可以改善瞬态响应与滤波性能。
- PCB 布局：将二极管尽量靠近被保护或需稳压的节点布置，限流电阻与旁路电容布线短且宽，减少寄生电阻与感抗，有助于热量通过铜箔扩散。
五、可靠性与选型注意
MM3Z3V3 提供广泛温度范围与低漏电特点，适用于对稳定性有要求的低功耗与工业级场合。选型时除稳压值外，应评估实际工作电流、最大反向电压、工作环境温度和长期热循环疲劳，以确保长期可靠性。封装为 SOD-323，便于自动贴装与小型化设计。
如需替代封装、更高耗散能力或更小结阻抗的型号，可联系晶导微电子技术支持获取系列产品对照与应用建议。
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