WMSIC Electronic Components

Jingdao Microelectronics ES1JL

ModelES1JL
PackageSOD-123F
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic ES1JL
Type
Jingdao Microelectronics
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
ES1JL
Electronic Component
1
Package
SOD-123F
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0228055864
Current
1A
Diode
1
Current(Ir)
5uA@600V
(Vf)
2V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ES1JL 产品概述

一、产品简介

ES1JL 是晶导微电子推出的一款独立式快恢复/高效率二极管,封装为 SOD-123F,面向开关电源与功率整流场景。器件在 1A 直流整流电流工作点具备较低正向压降与快速反向恢复特性,适用于对效率与开关损耗有要求的电源设计。

二、主要电气参数

  • 直流整流电流(Io):1A
  • 非重复峰值浪涌电流(Ifsm):25A
  • 反向耐压(Vr):600V
  • 正向压降(Vf):典型 1.7V ~ 2.0V @ 1A(依据具体测试条件)
  • 反向电流(Ir):5μA @ 600V
  • 反向恢复时间(Trr):35ns
  • 工作结温范围(Tj):-55℃ ~ +150℃

三、产品特点

  • 快恢复特性:Trr ≈ 35ns,有利于降低开关损耗与电磁干扰(EMI)。
  • 高压耐受:600V 反向耐压,适合高压整流与电源应用。
  • 低漏电流:在高压下反向电流仅 5μA,利于待机耗能控制。
  • 封装小巧:SOD-123F,适合高密度 PCB 布局及自动贴装生产。
  • 良好浪涌能力:Ifsm 25A,满足启动或短时过载条件。

四、典型应用场景

  • SMPS(二次整流、同步整流替代)
  • 功率因数校正(PFC)电路的高压端整流
  • 开关变换器的回收/续流二极管
  • 高压脉冲及工业电源整流
  • 反向保护及浪涌抑制电路

五、使用建议与热管理

  • 在 1A 连续工作时,注意散热路径与PCB铜箔面积,SOD-123F 封装散热能力有限,必要时增加散热面或使用过孔导热。
  • 对于频繁开关或高频应用,Trr 对开关损耗影响显著,建议在设计时评估反向恢复引起的应力与 EMI。
  • 推荐采用合适的回流焊工艺,避免过高峰值温度及长时间回流,保护器件可靠性。
  • 在高温环境或近极限工作点应考虑降额使用以延长寿命。

六、封装与可靠性

SOD-123F 小型独立封装,支持自动化贴装与回流焊接。器件设计满足商业/工业级温度范围(-55℃~+150℃,Tj),适用长寿命电源系统。建议在可靠性验证阶段做温升、循环热应力与浪涌试验。

七、选型与采购提示

选型时请根据具体电路的峰值电压、开关频率及浪涌要求核对 Vr、Trr 与 Ifsm 指标;若需更低正向压降或更短恢复时间,可咨询晶导微电子获取更详细的器件型号与样片资料。购买时确认封装(SOD-123F)、标记与批次以确保一致性。

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