WMSIC Electronic Components

JSMSEMI 1N5819WT

Model1N5819WT
PackageSOD-523
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI 1N5819WT
Type
JSMSEMI
Minimum package
3000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
1N5819WT
Electronic Component
1
Package
SOD-523
Electronic Component
Schottky Diode
Electronic Component
0.022g
Electronic Component
1
Electronic Component
BM0230664894
Current
350mA
Diode
Electronic Component
Current(Ir)
5uA@30V
(Vf)
600mV@200mA
Electronic Component
Electronic Component
Electronic Component
3000
Voltage Rating(Vr)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N5819WT 产品概述

一、产品简介

1N5819WT 是杰盛微(JSMSEMI)推出的一款小型肖特基整流二极管,采用 SOD-523 封装,适用于空间受限的消费电子与通信设备。基于提供的典型参数,该器件具有低正向压降、较低反向漏电以及良好的浪涌承受能力,适合用作低压快恢复整流、反向保护与电源轨防护等场合。

二、主要电气参数(基于给定数据)

  • 二极管配置:独立式(单个器件)
  • 正向压降 Vf:600 mV @ 200 mA
  • 直流整流电流(额定):350 mA
  • 非重复峰值浪涌电流 Ifsm:13 A(单脉冲)
  • 直流反向耐压 Vr:40 V
  • 反向电流 Ir:5 μA @ 30 V

上述参数表明 1N5819WT 在中低电流、低压场景下能够提供较低损耗的整流特性,同时在突发浪涌时具备一定保护能力。

三、特点与优势

  • 低正向压降:在 200 mA 条件下约 0.6 V,降低导通损耗,适合电池供电和高效率需求场景。
  • 小型封装:SOD-523 体积小,便于高密度 PCB 设计和移动设备应用。
  • 低反向漏电:在高达 30 V 反向电压下漏电仅约 5 μA,有利于待机功耗控制。
  • 良好浪涌能力:13 A 单次浪涌容量可应对开关瞬态及启动浪涌。

四、典型应用

  • 移动设备与便携式充电器中的反向连接保护
  • 开关电源与降压模块的输出整流(低电流场景)
  • 逻辑电平保护与电源轨隔离
  • 信号链路的钳位与快速整流

五、使用与设计建议

  • 电流热设计:额定整流电流为 350 mA,长期使用时需考虑 PCB 铜箔散热与器件周边热阻,必要时采用散热铜箔加宽或并联器件分流。
  • 浪涌保护:Ifsm 为单脉冲能力,若存在频繁或长时间大电流冲击,应在电路中增加限流电阻或选择更大封装/更高浪涌能力的器件。
  • PCB 布局:在 SOD-523 小封装上保证焊盘与热过孔设计,尽量缩短走线以减少寄生阻抗,确保可靠焊接与热传导。
  • 焊接工艺:遵循 SMD 常规回流曲线(参考 J-STD-020),避免过高回流峰值温度与过长加热时间以免损伤器件。

六、封装与可靠性

SOD-523 为超小型表贴封装,适合自动化贴装与高密度布板。器件在潮湿环境下应按行业标准妥善防潮处理(MSL 要求),并在推荐的环境温度和应力条件下使用,以保证长期可靠性。

七、选型提示

在选用 1N5819WT 时,若电路工作电流接近或超过 350 mA、或对浪涌要求高于 13 A,应考虑更大封装或更高额定电流的肖特基器件。同时,如需更低正向压降,可对比其它肖特基型号的 Vf 曲线,选择更适合的器件版本。

总结:1N5819WT 以其低 Vf、低 Ir 与小型 SOD-523 封装,在中低功率、受限空间的整流与保护应用中具备良好性价比。实际设计时应关注热管理与浪涌保护策略以确保长期稳定运行。

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