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JSMSEMI(杰盛微) BZT52C3V6Q
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI BZT52C3V6Q
- Type
- JSMSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- BZT52C3V6Q
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.034g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 90Ω
- Electronic Component
- BM0259484900
- Diode
- 1
- Current(Ir)
- 5uA@1V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 3.42V~3.78V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V6Q 产品概述
一、产品简介
BZT52C3V6Q 是 JSMSEMI（杰盛微）推出的一款小功率稳压二极管，标称稳压值 3.6V，工作在 SOD-123 表面贴装封装，适用于空间受限的低功耗稳压和基准电路。
二、主要参数
- 稳压值（标称）：3.6V
- 稳压值范围：3.42V ~ 3.78V
- 最大耗散功率 Pd：500mW
- 反向电流 Ir：5μA @ 1V
- 阻抗 Zzt：90Ω，Zzk：600Ω
- 工作结温：-55℃ ~ +150℃
- 封装：SOD-123
三、电气特性解读
标称 3.6V 对应二极管在击穿区稳定工作的电压；稳压范围反映工艺与容差。5μA@1V 表明在低反向电压时漏电流很小，适合低功耗场合。Zzt（动态阻抗）决定电压随电流变化的灵敏度，较高的 Zzk 表示在击穿拐点处“膝部”较软，低偏流使用时稳压性能下降。
四、功耗与电流计算
理论最大直流稳压电流 Iz(max) ≈ Pd / Vz ≈ 0.5W / 3.6V ≈ 139mA，但受封装散热限制应大幅限流。实际设计常在数 mA 至数十 mA 区间工作以保证热稳定与寿命。示例：若 Vin=5V，目标 Iz=10mA，则限流电阻 R=(5-3.6)/0.01=140Ω。
五、典型应用
- 低功耗基准电源与电压钳位
- 信号线电平移位、过压保护（非瞬态抑制器）
- 便携设备、小型传感器供电稳压
六、封装与装配注意
SOD-123 适合回流焊贴装，封装散热有限，版图需注意铜箔面积以改善散热。引脚极性须按标识正确焊接，避免长时间近功率器件集中发热。
七、选型与设计建议
若需精密基准或低噪声应用，建议选用低阻抗、低温漂的专用基准源；使用 BZT52C3V6Q 时应提高偏流到稳压区平坦段并避免持续接近最大 Pd，留有热裕度。检查电路启动与短路条件下的电流峰值以防过热。
八、可靠性与测试
推荐进行温升测试与热箔测量确认 PCB 实际散热能力；在-55℃ 到 +150℃ 温度范围内验证稳压点漂移与漏电变化，评估长期可靠性与漂移特性。
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