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JSMSEMI BC807
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI BC807
- Type
- JSMSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- BC807
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0227639678
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 200MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC807（JSMSEMI 杰盛微）产品概述
一、产品简介
BC807 为 PNP 型小信号晶体管，采用 SOT-23 封装，适合中高压、中等电流环境下的高效放大与开关应用。凭借 45V 的集射极击穿电压与 500mA 的集电极电流能力，BC807 在精密电子设备与电路设计中提供良好的性能与通用性，是音频、驱动与模拟前端等电路的理想选择。
二、主要电气参数
- 晶体管类型：PNP
- 最大集电极电流 Ic：500mA
- 集-射极击穿电压 Vceo：45V
- 耗散功率 Pd：300mW（SOT-23 封装，需注意散热与环境温度）
- 特征频率 fT：200MHz（适合中高频放大，宽带增益表现良好）
- 集电极截止电流 Icbo：100nA（低漏电有利于高精度偏置电路）
- 集-射极饱和电压 VCE(sat)：700mV（在导通状态的压降指标）
- 射-基击穿电压 Vebo：5V（反向基极保护应在此限制内）
三、性能特点与优势
- 工作电压与电流范围平衡：45V/500mA 的规格在多数通用放大与驱动场景中提供充足裕度。
- 高频响应佳：200MHz 的 fT 支持较宽频带的小信号放大与快速开关。
- 低漏电流：100nA 的 Icbo 有利于降低静态误差，适合精密模拟电路。
- 小封装适配性强：SOT-23 便于表贴组装，适合空间受限的 PCB 布局。
四、典型应用场景
- 小信号放大器与前置放大电路（音频、传感器信号放大）。
- 电平转换与低功耗开关场合。
- 驱动小功率负载或作为输出级的 PNP 管。
- 通用模拟电路、差分对与偏置网络中的器件替换与选型。
五、使用建议与注意事项
- 散热管理：SOT-23 的总耗散功率为 300mW，连续工作时需考虑 PCB 铜箔散热与环境温度，以防额定功耗超限。
- 偏置与保护：避免基极反向电压超过 5V（Vebo），并在高电压切换时加入缓冲或限流措施以保护基极-射极结。
- 饱和状态下的电压降（约 700mV）在设计开关或饱和放大器时应计入电压损耗预算。
- 高频布局：为发挥 200MHz 的频率特性，走线应短且回流良好，布局注意寄生电容与电感控制。
六、品质与采购信息
JSMSEMI（杰盛微）品牌保障元器件的一致性与可追溯性，SOT-23 小封装适合自动贴片生产线。量产或长期供货可与供应商确认封装条带、出货检测与可靠性测试资料。
总结：BC807（JSMSEMI）以其平衡的电压、电流与频率特性，在中高压、中等电流的放大与驱动应用中表现出色。合理的热设计与偏置保护将帮助器件在实际电路中稳定发挥既有性能。
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