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JSMSEMI AO3400
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI AO3400
- Type
- JSMSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- AO3400
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0229964136
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.05nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO3400 产品概述
一、产品简介
AO3400 是 JSMSEMI（杰盛微）提供的一款 SOT-23 封装 N 沟道功率 MOSFET，额定漏源电压为 30V，定位为小体积、高开关速度的低侧开关元件。器件适合于便携设备、通信模块和一般功率管理电路中作为开关或保护器件使用。
二、主要参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：5.8A（器件极限，受散热条件影响）
- 导通电阻 RDS(on)：40mΩ @ Vgs=4.5V, Id=5A
- 功耗 Pd：350mW（器件在特定散热条件下的允许耗散）
- 阈值电压 Vgs(th)：1.4V（典型，通常以少量漏流测试）
- 输入电容 Ciss：1.05nF @ 15V
- 反向传输电容 Crss：77pF @ 15V
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
三、性能要点与设计注意
- 开通驱动：在 Vgs=4.5V 下 RDS(on)≈40mΩ，适合微控制器或 5V 驱动；若仅以 3.3V 或更低电压驱动，导通电阻会显著上升，应评估功耗。
- 热管理：器件 Pd 标称 350mW，且封装有限的散热能力意味着在高电流条件下需使用大铜箔、散热过孔或并联多 MOSFET 来分担热量。按照 I^2·R 计算导通损耗，5A 连续导通时理论损耗约 1W，远超 Pd，须避免长期满载。
- 开关特性：Ciss ~1.05nF、Crss ~77pF，表明开关速度较快但在高频开关（数百 kHz 以上）时会产生显著栅极驱动损耗和开关损耗，应配合合理驱动电阻和门极驱动设计。
- 门限与逻辑兼容：Vgs(th)=1.4V 表明器件为逻辑电平敏感型，但仍需保证足够栅压以达到所需 RDS(on)。
四、封装与布局建议
SOT-23 小尺寸适合空间受限应用。布局时建议：
- 将功率回路（漏极/源极）走短而宽的铜层，减小电阻与寄生感抗；
- 在 PCB 底层或大面积铜皮做散热，必要时增加过孔通到内层或底层散热区；
- 栅极与驱动源之间放置 10–100Ω 阻尼以控制开关振铃，并在栅极近端放置 TVS 或 RC 以抑制瞬态。
五、典型应用与选型建议
适用于低压 DC-DC 降压电路的低侧开关、负载断开、反向保护电路、移动电源管理等场景。选用时注意评估实际工作电流与功耗及散热条件；若需长期大电流（多安级别）工作，应优先考虑更大封装或并联器件以保证可靠性。
备注：具体电气图与引脚排列请参照厂家完整数据手册，以确保引脚定义与封装尺寸与实际器件一致。
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