WMSIC Electronic Components

JSMSEMI IR2106STRPBF-JSM IR2106STRPBF

ModelIR2106STRPBF-JSM
PackageSOP-8
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI IR2106STRPBF-JSM
Type
JSMSEMI
Minimum package
2500 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
IR2106STRPBF-JSM
Electronic Component
1
Package
SOP-8
Electronic Component
(UVP)
Electronic Component
Gate Driver IC
Electronic Component
0.103g
Electronic Component
1
Electronic Component
BM0258706477
Operating Temperature
40℃~+125℃
Operating Voltage
10V~20V
Load Type
MOSFET;IGBT
Current(IOH)
300mA
Current(IOL)
600mA
Driver Channel Count
2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IR2106STRPBF-JSM 产品概述

一、产品概述

IR2106STRPBF-JSM(品牌:JSMSEMI/杰盛微)是一款双通道高低边驱动器,专为驱动功率MOSFET与IGBT等开关器件设计。器件采用SOP-8封装,支持高低侧驱动配置,工作电压范围宽(10V~20V),同时集成欠压保护(UVP),适用于中高压半桥与全桥功率转换场合。

二、主要特性

  • 双通道驱动:同时提供高侧与低侧的栅极驱动能力,便于构建半桥/全桥拓扑。
  • 驱动能力:灌电流(IOL)600mA,拉电流(IOH)300mA,具备较强的关断吸收能力与适度的开通速度。
  • 开关性能:典型下降时间(tf)35ns,有利于减小开关损耗与提升切换性能。
  • 保护与低功耗:内置欠压保护(UVP),静态工作电流仅约120μA,适合对待机功耗敏感的系统。
  • 广温范围:工作温度范围-40℃~+125℃,适应工业级环境。

三、电气参数要点

  • 驱动电压范围:VDDA/VCC等驱动电源可在10V至20V之间选择,保证充分栅极门限余量以驱动各种MOSFET/IGBT。
  • 驱动方向性:注意器件拉、灌电流不对称,600mA的灌电流有利于快速关闭器件,300mA的拉电流在开通时需要配合合适的门极电阻以控制dv/dt与电磁干扰。
  • 开关时间:35ns的下降时间为参考指标,实际开关速度受寄生电感、电容、门极电阻与负载条件影响。

四、封装与热/环境规格

  • 封装形式:SOP-8,便于表面贴装生产与常规散热设计。
  • 环境适应:-40℃~+125℃工业级工作温度,适合电机驱动、电源转换等严苛环境。设计时需关注封装导热与PCB散热路径,确保长时间可靠工作。

五、典型应用

  • 半桥/全桥逆变器与驱动模块;
  • 开关电源(SMPS)和功率因数校正(PFC)前端;
  • 电机驱动控制(驱动MOSFET/IGBT);
  • 各类中功率开关转换与负载切换电路。

六、设计注意事项

  • 电源去耦:建议在VCC与GND近旁并联低ESR电容与快速旁路电容以抑制瞬态尖峰。
  • 门极电阻:根据器件与系统EMI要求选择合适门极电阻(通常10Ω~100Ω范围),平衡开关损耗与过渡应力。
  • 引导电容(Bootstrap):若采用高侧驱动,需配置合适的bootstrap电容与二极管以保证高侧门极供电稳定。
  • 热管理:在高频或高负载条件下,注意SOP-8封装的散热限制,可通过铜箔加厚与散热板改善热性能。
  • 欠压保护校验:在系统上电/掉电与再起动场景下验证UVP行为,确保栅极未被错误驱动。

七、优势概述

IR2106STRPBF-JSM结合较宽的驱动电压、强劲的关断能力、内置欠压保护与低静态电流,适合需要可靠保护与工业级温度适应性的中等功率驱动场景。SOP-8封装便于标准化生产,是驱动MOSFET/IGBT的实用解决方案。

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