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JSMSEMI CZT5551-JSM CZT5551
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI CZT5551-JSM
- Type
- JSMSEMI
- Minimum package
- 1000 未知
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- CZT5551-JSM
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.198g
- Electronic Component
- 1
- Electronic Component
- BM0259364234
- Operating Temperature
- 65℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CZT5551-JSM 产品概述
一、概述
CZT5551-JSM 是 JSMSEMI（杰盛微）推出的一款高压 NPN 晶体管，采用 SOT-223 表面贴装封装，面向中功率开关与放大场合。器件在设计上兼顾高压耐受与较高直流电流增益，适合需要较大电流驱动能力且占板面积受限的应用。
二、主要参数
- 晶体管类型：NPN
- 集电极电流（Ic）：600 mA（最大）
- 集射极击穿电压（Vceo）：160 V
- 耗散功率（Pd）：2 W
- 直流电流增益（hFE）：250 @ Ic=10 mA, Vce=5 V
- 特征频率（fT）：300 MHz
- 集电极截止电流（Icbo）：50 mA（标称）
- 集射极饱和电压（VCE(sat)）：≤200 mV @ Ic=50 mA / 5 mA
- 射基极击穿电压（Vebo）：6 V
- 封装：SOT-223
三、性能特点
- 高压能力：Vceo 达 160 V，适合高压开关与续流场合。
- 较大电流容量：600 mA 的集电极电流能力满足中等功率负载驱动需求。
- 低饱和压降：VCE(sat) 在典型工作电流下可低至 200 mV，有利于降低开关损耗。
- 高频特性良好：fT=300 MHz，支持较快开关速度与射频前端的小信号增益。
- 高频直流增益高：在低电流区（10 mA）hFE 可达 250，便于作为放大级器件使用。
四、典型应用
- 开关电源与次级驱动电路的开关管或保护管。
- 中小功率电机驱动、继电器驱动及灯控电路。
- 低频至中高频放大器及前置放大级。
- 工业控制、家电及通信设备中需要高压耐受与较高增益的场合。
五、使用与注意事项
- 散热管理：封装为 SOT-223，器件耗散功率 Pd 为 2 W；在实际应用中需保证良好散热（合理铜箔面积或散热片），以避免结温超限导致性能下降。
- 击穿与偏置：射基极击穿 Vebo=6 V，基极-发射极间正向/反向偏置需在安全范围内控制。
- 截止电流：标称 Icbo 值较大，设计时应注意漏电流对静态功耗与偏置稳定性的影响，必要时采用旁路或偏置补偿措施。
- 建议在数据表和应用规范下选择适当的工作点，并进行实际温度与频率下的验证。
六、封装与采购信息
- 品牌：JSMSEMI（杰盛微）
- 封装形式：SOT-223，便于表面贴装与散热处理。
- 描述分类：未分类（请以厂家数据表为准以获取更完整的电气和机械规格）
如需完整电气特性曲线、引脚定义、典型应用电路与封装尺寸图，请提供需求，我可以基于厂家资料为您整理详细的数据手册摘要与推荐电路。
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