WMSIC Electronic Components

JSMSEMI MMBTA42

ModelMMBTA42
PackageSOT-23
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI MMBTA42
Type
JSMSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
MMBTA42
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.057g
Electronic Component
1
Electronic Component
BM0230664912
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
50MHz
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBTA42 产品概述

一、主要特性

MMBTA42 是由 JSMSEMI(杰盛微)推出的一款高压小功率 NPN 双极型晶体管,采用 SOT-23 封装,适合在空间受限且需要较高耐压的电路中使用。其主要特性包括高集电极-发射极击穿电压、低漏电流以及中等频率特性,适用范围广泛。

二、关键性能参数

  • 工作结温度范围(Tj):-55 ℃ ~ +150 ℃
  • 集电极截止电流(Icbo):100 nA(低漏电,有利于高阻态精度)
  • 集电极-发射极击穿电压(Vceo):200 V(高耐压,适合中高压电路)
  • 射基极击穿电压(Vebo):6 V
  • 特征频率(fT):50 MHz(适合低频到中频放大与开关)
  • 最大集电极电流(Ic):500 mA(短时驱动能力良好)
  • 耗散功率(Pd):350 mW(SOT-23 小封装,需注意热管理)
  • 集电极-发射极饱和电压(VCE(sat)):约 500 mV(在常见驱动条件下表现良好)

三、典型应用场景

  • 中高压开关电路与保护电路:Vceo=200V 支持较高电压环境下的开关与级联应用。
  • 中低功率驱动:可驱动小型继电器、指示灯和低功率负载(注意 Pd 与散热限制)。
  • 放大器与缓冲级:fT=50MHz 适合音频到低射频范围的放大与前置缓冲。
  • 工业与汽车电子(在满足温度和散热要求下):工作结温度覆盖-55℃~150℃。

四、封装与热管理

SOT-23 小体积封装使器件便于贴片自动化装配,但同时限制了耗散功率(Pd=350 mW)。在设计中应注意:

  • 保持良好的 PCB 散热路径(加大 GND/散热铜箔、使用热vias)。
  • 根据工作电流和占空比估算结温,确保不超过 Tjmax。
  • 在高集电极电流或连续开关场景下考虑外部散热或并联器件方案。

五、典型电路与使用建议

  • 常用接法:共射开关、共集缓冲或共射放大器。
  • 当作为开关使用时,注意基极驱动电流与限流电阻,确保器件进入饱和或截止状态且 VCE(sat) 控制在允许范围内。
  • 在高压应用中建议预留安全裕度(如工作电压不超过 Vceo 的 60~80%),并加入过压保护与抑制元件。

六、选型与注意事项

  • 若工作电流接近 500 mA 或长期功耗接近 Pd,应优先选择功率更大的封装或外部散热方案。
  • 电路在高温环境下运行时,需关注结温上升对漏电流和击穿电压的影响。
  • 如需更详尽的特性曲线(如 VCE(sat) 与 Ic 的典型测试条件、热阻 RthJA),请参考厂商完整数据手册。

七、品牌与订购信息

产品型号:MMBTA42
品牌:JSMSEMI(杰盛微)
封装:SOT-23
若需样片、技术规格书或可靠性报告,请联系 JSMSEMI 授权代理或供应商获取最新数据手册及应用参考电路。

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