WMSIC Electronic Components

JSMSEMI AOD407

ModelAOD407
PackageTO-252
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI AOD407
Type
JSMSEMI
Minimum package
2500 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
AOD407
Electronic Component
1
Package
TO-252
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.47g
Electronic Component
1
Electronic Component
BM0259546657
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
34.7W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
1.44nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AOD407 产品概述

一、产品简介

AOD407 是一款 P 沟道功率场效应管(MOSFET),采用 TO-252(DPAK)表面贴装封装,适用于中功率、高可靠性的电源与负载开关场合。器件标称漏源电压 Vdss=60V,连续漏极电流 Id=20A,具备良好的开通性能与热耗散能力,适合作为高侧开关、反向保护与电源管理元件使用。

二、主要参数(概览)

  • 沟道类型:P 沟道
  • 漏源电压:60V
  • 连续漏极电流:20A
  • 导通电阻:RDS(on)=68mΩ(在 Vgs=10V, Id=12A 测试条件下)
  • 最大耗散功率:34.7W(封装与散热条件相关)
  • 门限电压:Vgs(th)≈1.2V(典型值,P 沟型阈值为负向极性)
  • 总栅极电荷:Qg=9.86nC(在 4.5V 驱动测得)
  • 输入电容:Ciss=1.44nF(@15V)
  • 反向传输电容:Crss=65pF(@15V)
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:TO-252(JSMSEMI / 杰盛微)

三、性能特点与优势

  • 低导通电阻(68mΩ@10V)在中等电流范围内可降低导通损耗,提高效率。
  • 较高的电流承载能力(20A)和标称60V耐压,使其在多数车载、工业与便携电源场景具备足够裕量。
  • 适中的栅极电荷与输入电容(Qg、Ciss)令开关速度与驱动能耗达到平衡,便于与常见驱动器配合。
  • TO-252 封装兼顾尺寸与散热,便于表面贴装工艺和 PCB 布局。

四、典型应用场景

  • 作为高侧开关用于电源切换与负载控制(尤其在需以 P 沟道实现高侧开关的低端驱动方案中)。
  • 电池管理、反向极性保护与负载断开电路。
  • 工业控制、通信设备和消费类电源的保护与分配。
  • 小功率马达驱动、DC-DC 转换的开关元件(依据拓扑与效率需求选择)。

五、使用注意与设计建议

  • 由于为 P 沟道器件,其栅源电压极性为负(相对于源),在驱动时需确保所施加的 Vgs 符合器件额定范围以避免误导通或损坏。
  • RDS(on) 给出条件为 Vgs=10V,实际电路中若驱动电压较低(如 ±4.5V),导通电阻会升高,应根据实际损耗重新评估发热与散热需求。
  • Qg 与 Ciss 指标提示需选用合适驱动能力的驱动器或在栅极串接阻尼电阻以控制开关过冲与振荡。
  • TO-252 的散热依赖 PCB 铜箔与过孔,建议在布局时增大焊盘铜皮、使用散热过孔并缩短主流路径以提高热传导效率。
  • 工作温度范围宽,但长时间高温工作会加速老化,需在系统层面留有热裕量与保护机制(如温度检测或限流设计)。

六、封装与可靠性

TO-252(DPAK)封装便于自动贴装与回流焊,适合批量生产。器件在正常应用中需遵循 JEDEC/厂商建议的回流温度曲线与焊接工艺。结合合理的 PCB 散热设计,可发挥器件标称的最大耗散能力与长期稳定性。

总结:AOD407 以其 60V 耐压、20A 电流等级与 68mΩ 的导通电阻,适合多种中功率电源管理与保护场合。合理的驱动与热设计将使其在可靠性与效率上表现优良。

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