WMSIC Electronic Components

JSMSEMI AO3400A

ModelAO3400A
PackageSOT-23-3L
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI AO3400A
Type
JSMSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
AO3400A
Electronic Component
1
Package
SOT-23-3L
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM0229961336
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
1.03nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO3400A(JSMSEMI 杰盛微)产品概述

一、产品简介

AO3400A 是一款面向通用开关和功率管理的 N 沟 MOSFET,封装为 SOT-23-3L,适合空间受限的便携式与板载电源设计。器件额定漏源电压为 30V,连续漏极电流为 5.8A,属于低压、中小电流等级的逻辑电平功率管,适用于低压快速开关场合。

二、主要电气参数(关键值)

  • 漏源电压 Vdss:30V
  • 连续漏极电流 Id:5.8A
  • 导通电阻 RDS(on):52mΩ @ Vgs=2.5V, Id=4A
  • 耗散功率 Pd:1.4W(SOT-23 封装热限制相关)
  • 阈值电压 Vgs(th):1V(典型)
  • 总栅极电荷 Qg:12nC @ 10V
  • 输入电容 Ciss:1.03nF @ 15V
  • 反向传输电容 Crss:77pF @ 15V
  • 工作温度范围:-55℃ ~ +150℃

三、特点与优势

  • 逻辑电平门槛:Vgs(th) ≈1V,且在 Vgs=2.5V 时 RDS(on) 已为 52mΩ,便于与低电压 MCU、便携电池系统直接驱动。
  • 小封装高集成:SOT-23-3L 适合空间受限的移动设备、消费电子与模块化电源。
  • 中等开关性能:Qg=12nC 与 Ciss≈1.03nF 表示对驱动能力要求适中,配合常见驱动器或 MCU 引脚可以获得良好切换速度与损耗平衡。
  • 宽工作温度:适应工业与汽车级的高低温环境。

四、典型应用场景

  • 电源开关/负载开关:便携设备电源路径选择、负载断开。
  • 低压直流-直流 转换器:作为同步整流或低端功率开关(需考虑封装散热)。
  • 电池管理与电源保护:防反接、过流限流(与外部电路配合)。
  • 信号开关/驱动:低电平驱动的小功率电机、继电器驱动等。

五、设计与使用建议

  • 驱动电压:若追求更低导通损耗,可使用更高的栅电压(受器件允许范围限制),但给定 RDS(on) 为 2.5V 测试值,直接采用 2.5V~4.5V 驱动在许多便携场景已足够。
  • 热管理:封装 Pd=1.4W 表示在无额外散热条件下功耗受限;高电流或持续导通时需优化 PCB 铜箔散热、增加焊盘面积或并联器件以降低结温。
  • 开关损耗:Qg=12nC 与 Crss=77pF 表示在高频开关时需关注栅极能量与米勒效应,推荐使用合适的驱动器、合理的栅阻并做死区/斜率控制以降低开关损耗与电磁干扰。
  • PCB 布局:栅极、漏极、源极走线尽量短且宽,栅极去耦与驱动回路靠近器件放置;漏极/源极焊盘加大铜箔以提升热散能力。

六、可靠性与采购提示

  • 使用前请参考完整器件数据手册以获取完整极限值曲线、包封热阻及典型特性曲线。
  • SOT-23 小封装易受热损,生产与回流焊工艺需按厂家推荐曲线控制升温速率与峰值温度。
  • 适用于需要小体积且对热耗和电流有合理控制的场合;若长时间大电流工作,考虑更大散热能力的封装或并联使用。

总结:AO3400A 在 30V 耐压、5.8A 等级下,以低门槛、适中导通电阻和小封装为特点,适合便携电源、负载开关等空间受限的电源设计。正确的驱动与热设计能最大化其性能与寿命。

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