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JSMSEMI MMBTA92
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI MMBTA92
- Type
- JSMSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- MMBTA92
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.057g
- Electronic Component
- 1
- Electronic Component
- BM0227639673
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 50MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBTA92 产品概述
一、简介
MMBTA92 是一款用于通用放大与开关的高压小信号晶体管，封装为 SOT-23，适合空间受限的表贴电路。器件在中等电流点具有稳定的直流电流增益，且具备较高的集电极-射极耐压，适用于需要高压耐受能力的低功耗应用。
二、主要电气参数
- 直流电流增益 hFE：80（条件：Ic=30mA，Vce=10V）
- 集电极-射极击穿电压 Vceo：300V
- 集电极电流 Ic（最大）：500mA（请参考数据手册区分脉冲与连续极限）
- 耗散功率 Pd：300mW（SOT-23 典型环境工况）
- 特征频率 fT：50MHz
- 集电极截止电流 Icbo：100nA（高压关断时漏电低）
- 射基极击穿电压 Vebo：5V（反向基-射耐压需注意）
- 集射极饱和电压 VCE(sat)：约500mV（在推荐测试条件下）
三、性能要点解析
该器件在约30mA工况下具有中等增益（hFE≈80），适合小信号放大与驱动级。300V 的 Vceo 使其能承受较高电压应力，适合高压轨道或隔离级应用。fT≈50MHz 表明在中频范围有良好响应，适用于开关频率不极高的转换器或驱动电路。低 Icbo 有利于提高关断精度和降低静态泄漏。
四、典型应用场景
- 高压开关与驱动（小功率电源、隔离驱动）
- 线性前置放大器与电平移位电路
- 低功耗开关电路、保护与测量前端
- SOT-23 封装的空间受限图纸与消费类电子
五、使用建议与注意事项
- Pd 为典型额定值，实际允许耗散与 PCB 热阻、环境温度和焊盘面积密切相关；高温下需按器件手册进行功耗降额设计。
- Ic 最大值需区分脉冲与连续额定，长时间大电流会受限于封装散热能力。
- 注意 Vebo（5V）限制，避免对基-射结施加反向过压。
- 若作为开关使用，保证足够的基极驱动以降低 VCE(sat)，同时监控功耗和结温。
六、封装与焊接要点
SOT-23 对应小体积焊盘，建议在布局时增加散热铜箔与热通孔，必要时连到大面积地铜以改善功耗散热。回流焊工艺兼容，但需避免过度机械应力导致引脚损伤。
七、可靠性与替代
该器件在温度范围内工作稳定，但在高温及高功耗工况下应做热仿真验证。选择替代器件时，应匹配 Vceo、hFE、Ic、Pd 与封装热阻等关键参数，必要时查询完整数据手册以确认极限与典型测试条件。
如需基于具体电路（放大、开关或保护）给出典型偏置电路、热计算或 PCB 布局建议，可提供电路要求与工作点，我将给出更详细的设计指导。
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