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JSMSEMI BSP170P
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI BSP170P
- Type
- JSMSEMI
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- BSP170P
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0230664924
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 160pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSP170P 产品概述
一、产品简介
BSP170P 为 JSMSEMI（杰盛微）推出的中低功率增强型N沟MOSFET，额定漏源电压60V，连续漏极电流3A，封装为SOT-223，适用于开关与低压控制场合。器件在-55℃至+150℃工作温度范围内稳定可靠，适配工业类宽温度应用。
二、主要参数一览
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：3A
- 导通电阻 RDS(on)：170mΩ @ Vgs=10V、Id=0.5A
- 功耗 Pd：1W（器件自身耗散，需结合PCB散热）
- 阈值电压 Vgs(th)：2.25V（典型）
- 输入电容 Ciss：160pF @ Vgs=10V
- 反向传输电容 Crss：28pF
- 封装：SOT-223
- 工作温度：-55℃ ~ +150℃
三、电气特性解读
阈值电压约2.25V，表明在较低栅压下开始导通，但RDS(on)标称是在Vgs=10V下测得，实际在5V或更低栅压下导通阻抗会显著增大，故并非严格的“低压逻辑电平”（logic-level）MOSFET。Ciss与Crss处于中等范围，开关过程中栅荷与米勒电容需要在驱动设计中考虑以控制开关损耗与过冲。
四、热与封装注意
SOT-223封装相比SOT-23具有更好的热扩散能力，但标称Pd=1W为器件裸片耗散上限，实际应用需通过铜箔面积极大提升散热或外贴散热片。长时间接近额定功耗时必须注意结温上升、RDS(on)随温度增大而增加的影响，建议留有安全裕量并进行热仿真或测量验证。
五、典型应用场景
- 低功率开关电源与降压转换器辅助开关
- 直流电机小功率驱动、继电器/负载开关
- LED驱动与背光控制（需注意热管理）
- 电池管理与保护电路中的开断与旁路功能
六、使用建议与电路注意事项
- 若需最低导通损耗，栅极驱动尽量接近10V；若仅有5V驱动，需评估RDS(on)增加带来的发热与效率下降。
- 开关驱动时考虑在栅极并联合适阻值以抑制振铃，必要时加米勒电容或RC缓冲。
- 在高频开关或大电流跃变场合，Crss带来的米勒效应会影响开关特性，应做过渡态仿真。
- 设计中预留足够的PCB铜箔面积并采用多层地/散热平面以降低结温。
七、可靠性与选型提示
BSP170P适合中低功率、空间有限且需要一定散热能力的场合。若系统对导通损耗或开关频率要求较高，建议选用更低RDS(on)或专为逻辑电平驱动优化的型号。订购时注意封装与批次信息，出货前可要求样片做温升与开关测试以确认系统级表现。
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