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JSMSEMI JSM27517
Configuration
1 options
Configuration
Option 131958
Availability on request
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI JSM27517
- Type
- JSMSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- JSM27517
- Electronic Component
- 1
- Package
- SOT-23-5
- Electronic Component
- (UVP)
- Electronic Component
- Gate Driver IC
- Electronic Component
- 0.041g
- Electronic Component
- 1
- Features
- Electronic Component
- Electronic Component
- BM0258741996
- Operating Temperature
- 40℃~+125℃
- Operating Voltage
- 5V~20V
- Load Type
- MOSFET；IGBT
- Current(IOH)
- 4A
- Current(IOL)
- 4A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
JSM27517 产品概述
一、产品简介
JSM27517 是杰盛微（JSMSEMI）推出的一款小封装、高速电机驱动芯片，封装为 SOT-23-5，专为驱动 MOSFET 和小功率 IGBT 的栅极而设计。器件在五孔到二十五伏的供电范围内工作，具备欠压保护（UVP）与极低静态电流，适合电池供电与便携式驱动系统。
二、主要参数
- 型号：JSM27517（JSMSEMI）
- 封装：SOT-23-5
- 工作电压：5V ～ 25V（推荐常用范围 5V ～ 20V）
- 拉电流 IOH：4A（瞬态峰值）
- 灌电流 IOL：4A（瞬态峰值）
- 上升/下降时间 tr / tf：10ns / 10ns（典型）
- 欠压保护：内置 UVP
- 工作温度：-40℃ ～ +125℃
- 静态电流 Iq：约 180 µA
三、关键特性与优势
- 高驱动能力：4A 的瞬态拉/灌能力，可在短脉冲下快速给 MOSFET/IGBT 充放电，适合高速 PWM 控制。
- 快速开关：tr/tf 典型 10ns，有利于提高开关效率和减小目标器件的开关损耗（同时需注意共振与 EMI）。
- 低静态功耗：180 µA 的静态电流适合电池供电或低功耗待机场景。
- 可靠保护：内置欠压保护，防止供电不足时误驱动栅极导致器件损坏。
四、封装与热管理
SOT-23-5 小封装便于在空间受限的电路板上布局，但封装散热能力有限。实际应用中建议：
- 在 PCB 上使用加厚铜或散热焊盘，增加散热面积；
- 对于频繁高频率大电流开关，需评估平均功耗并考虑外部散热或并联驱动。
五、典型应用场景
- 无刷/有刷直流电机驱动（中小功率）
- 电池驱动的便携设备电机控制器
- 半桥/全桥驱动前端栅极驱动器
- 工业控制中小信号 IGBT、MOSFET 驱动
六、设计建议与注意事项
- 驱动电压须与被驱动 MOSFET/IGBT 的最大栅压匹配，避免超过器件额定 VGS。
- 对于大栅电容的功率器件，建议并联合适的栅阻（Rg）以控制开关边沿，减少振铃与 EMI；必要时加 RC 缓冲或 TVS 抑制尖峰。
- 评估器件在目标 PWM 频率下的平均功耗与峰值应力，防止由于长期高负载导致过热失效。
- 在系统靠近开关节点处布置较短的走线，降低寄生电感，提高驱动稳定性。
七、选型建议
若目标为中小功率电机或需要在受限空间内实现高速栅极驱动，JSM27517 在驱动能力、速度与低静态功耗之间提供了良好平衡。选择时应核对被驱动器件的门极电荷、最大栅压和工作频率，以保证器件在工作条件下的可靠性与寿命。
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