WMSIC Electronic Components

JDTfuse JEN1006-3.3V-ULC JEN1006

ModelJEN1006-3.3V-ULC
PackageDFN1006-2
BrandJDTfuse
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JDTfuse JEN1006-3.3V-ULC
Type
JDTFUSE
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JDTFUSE
Electronic Component
JEN1006-3.3V-ULC
Electronic Component
1
Package
DFN1006-2
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.011g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.6pF
Electronic Component
BM0264547808
Operating Temperature
55℃~+125℃
Voltage
5V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

JEN1006-3.3V-ULC 产品概述

一、产品简介

JEN1006-3.3V-ULC 是集电通(JDTfuse)推出的一款双向 TVS 抑制二极管,专为 3.3V 工作电压系统提供快速的静电和感应浪涌保护。单通道、DFN1006-2 超小封装,体积小、响应快,适合空间受限且对信号完整性要求高的应用。品质稳定,性价比高,满足工业级温度范围(-55℃~+125℃)。

二、主要参数

  • 极性:双向
  • 反向截止电压 VRWM:3.3V
  • 击穿电压 VBR:3.5V
  • 钳位电压(典型):5V
  • 峰值脉冲电流 Ipp:10A
  • 峰值脉冲功率 Ppp:50W(按标准脉冲条件)
  • 反向电流 Ir:200nA
  • 结电容 Cj:0.6pF(低容抗,适合高速信号)
  • 通道数:单路
  • 工作温度:-55℃~+125℃
  • 防护等级:符合 IEC 61000-4-5(浪涌)与 IEC 61000-4-2(静电放电)标准
  • 封装:DFN1006-2

三、关键特性与优势

  • 低结电容(0.6pF),对高速数据线(例如差分或单端高速接口)影响小,保证信号完整性。
  • 双向结构,可在正负突波情况下均衡吸收能量,适用于双极性信号通路。
  • 低泄漏电流(200nA),在待机或低功耗系统中对电源影响小。
  • 钳位电压约 5V,有效限制瞬态电压,保护下游器件免受过压损伤。
  • 小型 DFN1006-2 封装,利于高密度布局与自动化贴装,同时散热性能良好。
  • 满足 IEC 静电与浪涌标准,可靠性与抗扰度适合工业及消费类应用。

四、典型应用场景

  • 移动终端与便携设备的 I/O 口保护(触摸、按键、信号线)。
  • 高速串行接口保护(3.3V 逻辑电平的数据线、差分对前端防护)。
  • 工业控制与传感器接口、现场总线前端防护。
  • 医疗、汽车及物联网终端中对静电和浪涌敏感的信号与控制线保护。

五、封装与 PCB 布局建议

  • 将器件尽量靠近受保护的连接器或接口布置,缩短信号线到 TVS 的走线长度以降低感应。
  • 对地回流应尽量短且宽,推荐在器件下方或附近布置连续地平面并通过足够的过孔导通至参考地。
  • 小封装焊盘应按厂商推荐的 PCB 封装尺寸设计,保证良好焊接和热传导。
  • 在高能量脉冲环境下,必要时在信号线上并联小阻或采用串联阻抗以分担能量,延长 TVS 寿命。

六、使用注意事项

  • 虽为高能量吸收器件,但应避免长时间承受超出标称冲击能量的重复脉冲。
  • 双向器件没有极性标识的安装限制,但仍需按 PCB 设计图正确放置。
  • 在设计防护方案时,综合考虑接地、走线和系统旁路电容,以实现最佳抗干扰性能。

如需样品、应用方案或封装尺寸图,请联系集电通(JDTfuse)授权渠道获取更多技术支持与数据手册。

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