WMSIC Electronic Components

KUU S8550

ModelS8550
PackageSOT-23
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU S8550
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
S8550
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.038g
Electronic Component
1
Electronic Component
BM0264873511
Transistor Type
PNP
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
500mA
Current (h FE)
80

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S8550 PNP 三极管(KUU,SOT-23)产品概述

一、产品简介

S8550 是一款面向小信号放大与开关应用的 PNP 双极型晶体管,KUU 品牌、SOT-23 封装。本说明基于单只器件(数量:1 个),适合在 低压低功耗电子电路中替代或设计使用。器件在小尺寸外形下提供稳定的电流放大和可靠的开关性能,便于表面贴装制造(SMT)。

二、主要技术参数

  • 晶体管类型:PNP
  • 集电极电流 Ic:500 mA(最大)
  • 集—射击穿电压 Vceo:25 V(最大)
  • 功耗 Pd:300 mW(最大)
  • 直流电流增益 hFE:≈80(典型值)
  • 集电极截止电流 Icbo:1 μA(典型/最大)
  • 集电极饱和电压 VCE(sat):500 mV(在规定偏流下)
  • 发—基击穿电压 Vebo:5 V(最大)
  • 封装:SOT-23(表面贴装)

三、产品特点

  • 小型 SOT-23 封装,适合高密度 SMT 板载安装。
  • 500 mA 的集电极电流能力满足中等负载的开关和驱动需求。
  • 25 V 的耐压适合常见低压电源系统(3.3V、5V、12V 等)中的信号级应用。
  • 典型 hFE≈80,适合电流放大和模拟前级电路使用。
  • 低漏电流(Icbo≈1 μA)有利于低静态电流设计以降低待机功耗。

四、典型应用场景

  • 低压小功率电源控制与反相驱动。
  • 信号放大器、前置级与电平转换。
  • LED 驱动、继电器或小型拨动负载的开关元件(注意功耗限制)。
  • 便携设备、家电控制板与各类嵌入式系统的通用开关/放大器件。

五、封装与引脚(说明)

封装:SOT-23,便于自动贴片生产。
常见引脚排列(请以具体厂商数据手册为准):1—基极(B)、2—集电极(C)、3—发射极(E)。在设计 PCB 与焊接前,建议核对 KUU 官方封装图与引脚定义,避免接线错误。

六、选用与注意事项

  • 功耗 Pd=300 mW,SOT-23 封装在高电流或高温环境下热耗散有限,实际使用时应考虑良好散热与合理的占空比。
  • VCE(sat)≈500 mV,在驱动负载时会有一定压降,应在功耗预算中计算损耗。
  • 发—基击穿 Vebo=5 V,禁止在基极施加超过额定电压以免损坏管结。
  • 若需在更高功耗或更高温度下长期工作,请选用散热性能更好的器件或更大封装。
  • 设计时建议参考制造商的典型特性曲线(hFE 与 Ic、Vce 的关系)以优化偏置与增益。

如需封装图、典型特性曲线、可靠性测试或批量采购信息,可联系 KUU 官方或参考其完整数据手册。

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