WMSIC Electronic Components

KUU 2SK3019

Model2SK3019
PackageSOT-523
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU 2SK3019
Type
KUU
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
2SK3019
Electronic Component
1
Package
SOT-523
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.025g
Electronic Component
1
Electronic Component
BM0231142800
Power Dissipation(Pd)
150mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
13pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SK3019 产品概述

一、主要参数概览

2SK3019 为 KUU 品牌的 N 沟道场效应管(MOSFET),单个器件,封装为 SOT-523,适合高密度贴片。关键参数如下:

  • 漏源电压 Vdss:30V
  • 连续漏极电流 Id:100mA
  • 导通电阻 RDS(on):13Ω @ Vgs=2.5V
  • 耗散功率 Pd:150mW
  • 阈值电压 Vgs(th):1.5V @ ID=100µA
  • 输入电容 Ciss:13pF,反向传输电容 Crss:4pF,输出电容 Coss:9pF

二、产品特点与优势

  • 低压小功率:30V 耐压适合多数低压电子系统与便携设备。
  • 逻辑电平驱动:在 Vgs=2.5V 下给出标称 RDS(on),便于与低电压控制逻辑直接配合。
  • 小电容、快切换:Ciss=13pF,门极电荷较小,适合频繁开关或高速信号切换。
  • 小封装 SOT-523:占板面积小,利于高密度布局,但热能力受限。

三、典型应用场景

  • 低电流开关:传感器、低功耗外围电路的开/关控制。
  • 信号切换与电平移位:作为小信号开关或模拟开关元件。
  • 移动设备与便携式电子:空间受限且功耗要求低的应用场合。
    (不建议用于需长时间承载大电流或驱动功率负载的场合)

四、使用建议与注意事项

  • 散热边界:Pd=150mW,若满载 Id=100mA 时,导通损耗约 I^2·R = (0.1)^2×13Ω = 0.13W(130mW),接近耗散上限,长期工作需注意 PCB 散热与降低环境温度。建议在实际设计中留余量,常规工作电流建议远低于 100mA。
  • 驱动与栅极限流:门极电容小,驱动电流需求低,但仍建议串联小阻值门极电阻以抑制边沿振铃与电磁干扰。
  • 保护措施:内部含本征体二极管,注意反向电压与瞬态过压,应配合限流、电阻或 TVS 抑制瞬态。
  • PCB 布局:尽量增大衬铜面积以利散热;靠近热源时需验证热升高对 RDS(on) 的影响。

五、封装与热管理

SOT-523 为超小型封装,适合空间受限设计,但热阻较高,器件的最大耗散受焊盘面积和环境温度影响明显。若需要长时间较高电流工作,可通过加大铜箔、使用热过孔或改用更大封装器件来保障可靠性。

六、总结

2SK3019 是一款面向低电压、低电流场合的 N 沟道 MOSFET,适合小信号开关与便携式设备应用。其低门极电容与 2.5V 逻辑驱动兼容性是优势,但受限于较高的 RDS(on) 与有限的功耗承受能力,设计时需重视热管理与电流余量。对需要在 30V 范围内进行高密度布板、低功耗控制的项目,2SK3019 可作为可靠的选项。

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