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LRC LN4812LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LN4812LT1G
- Type
- LRC
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LN4812LT1G
- Electronic Component
- 1
- Package
- SOT-23E
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228545723
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 610pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LN4812LT1G 产品概述
一、产品简介
LN4812LT1G 为 LRC（乐山无线电）的一款小封装 N 沟道场效应管（MOSFET），采用 SOT-23E 封装，面向低压逻辑驱动与小功率开关应用。器件设计兼顾导通电阻与开关特性，适合便携式电源、负载开关和电源管理等场景。
二、关键参数
- 极性：N 沟道，数量：1 只
- 漏源电压 Vdss：30 V
- 连续漏极电流 Id：6 A
- 导通电阻 RDS(on)：52 mΩ @ Vgs=4.5 V, Id=5 A
- 耗散功率 Pd：1.4 W（实际与 PCB 散热相关）
- 阈值电压 Vgs(th)：1 V（典型）
- 输入电容 Ciss：610 pF @ 15 V
- 反向传输电容 Crss：77 pF @ 15 V
- 工作温度范围：-55 ℃ ～ +150 ℃
- 描述中标注 “3V@250µA”，可理解为对 3V 逻辑电平的兼容性提示；具体含义建议以厂方完整数据手册为准。
三、性能特点
- 低 RDS(on)：在 4.5 V 门极驱动下导通电阻较低，适合 5 A 级别的连续电流应用。
- 逻辑兼容性：阈值低（≈1 V），对较低门极电压有响应，适用于 3~5 V 驱动体系。
- 中等开关损耗：Ciss=610 pF、Crss=77 pF，表明在中低频率开关中表现平衡，适合降压转换器和负载开关。
- 小型封装：SOT-23E 便于空间受限的 PCB 布局。
四、典型应用
- 便携式电源开关与电源路径控制
- DC-DC 降压转换器的低侧开关或同步整流（需评估开关损耗）
- 电池管理与负载连接/断开控制
- 小功率电机或继电器驱动、电源保护电路
五、设计与使用建议
- 若需最低导通损耗，门极驱动建议尽量靠近 4.5 V；若仅 3 V 驱动，应在实际电流条件下验证 RDS(on) 与温升。
- 耗散功率 1.4 W 在 SOT-23E 封装下受 PCB 铜箔面积影响显著，应在布局时增加散热铜箔或热过孔。
- 开关频率较高时需考虑 Ciss/Crss 带来的驱动能量与反向恢复影响，可配合合适的栅极电阻与驱动器。
- 具体引脚排列与最大额定值请参考厂家原始数据手册并按其建议进行封装与焊接工艺控制。
六、封装与可靠性
SOT-23E 小封装利于高密度布板，工作温度范围宽（-55 ℃ 至 +150 ℃），适合工业级和商用级环境。为保证长期可靠性，建议遵循制造商的焊接曲线与湿热老化规范，并在高温或高电流场景下进行热仿真验证。
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