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LRC L2N7002WT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC L2N7002WT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- L2N7002WT1G
- Electronic Component
- 1
- Package
- SOT– 323 (SC-70)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0086103323
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：L2N7002WT1G
一、产品简介
L2N7002WT1G 是一款 N 沟道增强型场效应管（MOSFET），广泛应用于各种电子电路中，尤其是在低功耗、小信号开关和放大应用中。它的封装采用 SC-70-3，尺寸小巧，非常适合用于空间有限的电路设计。
二、关键特性
- 额定功率: 225 mW
- 最大漏源电压（V_DS）: 60 V
- 最大漏电流（I_D）: 115 mA
- 封装类型: SOT-323 (SC-70)
- 工作温度范围: -55°C 至 +150°C
- 通道类型: N 沟道
这些特性使得 L2N7002WT1G 成为处理相对较大电压和电流的理想选择，同时在小型便携设备中也能实现高效的开关操作。
三、应用场景
L2N7002WT1G MOSFET 的主要应用场景包括：
低功耗开关: 适用于各类电子设备中的信号开关、电源管理及电源路径切换。由于其小巧的封装，适合便携式电子设备如手机、平板电脑等。
信号放大: 在音频设备或者传感器中，L2N7002WT1G 可以用于信号放大电路中，以增加系统的信噪比和传输距离。
电源管理: L2N7002WT1G 也可以用于电源调节和稳压器设计中，实现高效能的电源转换。
逻辑电路: 可用于数字电路中的开关逻辑、高速脉冲和其他集成电路应用，满足高频率工作的需求。
四、技术参数详情
- 额定功率: 225 mW，这意味着在正常工作条件下，该 MOSFET 能够安全地处理该功率范围内的应用。
- 漏源电压: 最高可达 60 V，使其能够在较高电压环境下工作，适应于如电动车控制器、电气设备等需要承受高电压的场合。
- 漏电流: 115 mA 的漏电流适合于中低功率设备，有助于实现低损耗的开关特性。
- 封装尺寸: SC-70 封装的设计，使得该产品在体积上具有显著优势，为电路设计师在设计紧凑型电路时提供了极大的便利。
五、性能优势
低门槛电压: L2N7002WT1G 具有较低的导通电压，可以在较宽的控制电压范围内实现有效开关，降低总体功耗。
高开关速度: 该 MOSFET 能够实现快开快关，有效提高电路的工作效率和响应能力，特别是在控制高速开关应用时。
热稳定性: 能够在较宽的温度范围内工作，确保在各种工作环境下保持稳定的性能。
六、总结
L2N7002WT1G 是一款性能卓越、应用广泛的 N 沟道 MOSFET，凭借其理想的电气特性和小巧的封装设计，适合在现代电子产品中扮演重要角色。无论是用于开关、信号放大还是电源管理，其高效能与可靠性的特点使其成为工程师们在设计时的理想选择。在未来的应用中，随着电子设备的小型化与高效化的需求持续增长，L2N7002WT1G 将继续为行业提供强大的技术支持。
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