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LRC LBSS260DW1T1G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LBSS260DW1T1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LBSS260DW1T1G
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.013g
- Electronic Component
- 1
- Electronic Component
- BM0226545622
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 380mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LBSS260DW1T1G 产品概述
一、产品简介
LBSS260DW1T1G（品牌：LRC/乐山无线电）是一款小封装单通道N沟道场效应管（MOSFET），封装为SOT-363。器件额定漏源耐压为60V，适用于低功耗、开关及信号传输类应用场景。工作温度范围宽，-55℃至+150℃，适合工业级温度要求的设计。
二、主要参数
- 类型：N沟道 MOSFET（单通道）
- 漏源电压 Vdss：60V
- 阈值电压 Vgs(th)：1.0V（Id=250µA）
- 导通电阻 RDS(on)：2.5Ω @ Vgs=2.5V
- 连续漏极电流 Id：200mA
- 功耗 Pd：380mW
- 输入电容 Ciss：22.8pF @ 25V
- 反向传输电容 Crss：2.9pF @ 25V
- 封装：SOT-363
- 数量：1个N沟道
三、性能亮点
- 小体积封装（SOT-363）便于高密度贴片和便携设备设计；
- 低至1V的阈值电压，便于在低电压逻辑下被驱动；
- 在2.5V栅压下的导通电阻为2.5Ω，适合微小功率负载开关；
- 较低的输入电容（Ciss≈22.8pF），有利于快速开关且占用较少驱动能量；
- 宽温度范围和合理功耗能力（Pd=380mW）适用于一般工业环境。
四、典型应用
- 便携式设备的电源/负载切换与控制；
- 低电流开关、信号路由与模拟开关场合；
- 电平位移、逻辑隔离及保护电路（反向保护、低功耗开断）；
- 小功率驱动电路、传感器接口与电子玩具等。
五、使用建议与注意事项
- 由于RDS(on)在2.5V栅压下为2.5Ω，器件适用于小于数百毫安的负载；超过时请评估功耗和温升；Pd=380mW需注意PCB散热与铜箔面积；
- 驱动方式：若需更低RDS(on)，应提高Vgs（但请参考器件最大栅压规范），否则在低电压下仍以开关/信号用途为主；
- 开关速度与栅容：Ciss和Crss会影响切换损耗与驱动需求，驱动器需能提供足够电流以快速充放电栅电容，避免长时间处于线性区发热；
- 焊接与处理：SOT-363为小型封装，建议采用回流焊工艺并注意防静电措施。
六、选型参考
若设计需要在60V耐压下进行小电流开关、要求小封装与低输入电容，LBSS260DW1T1G是合适的选择。对于更高电流或更低导通电阻的需求，应选择更大封装或低RDS(on)等级的MOSFET。
七、结语
LBSS260DW1T1G以其紧凑封装、合适的耐压等级和低电容特性，适合各种低功耗、小电流的开关与信号应用。设计时关注导通损耗与散热布局，可发挥其在便携与工业场景中的优势。
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