WMSIC Electronic Components

LRC S-LBAS21HT1G

ModelS-LBAS21HT1G
PackageSOD-323
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC S-LBAS21HT1G
Type
LRC
Minimum package
3000

Technical parameters

Electronic Component
LRC
Electronic Component
S-LBAS21HT1G
Electronic Component
1
Package
SOD-323
Electronic Component
Switch Diode
Electronic Component
0.026g
Electronic Component
1
Electronic Component
BM0230027924
Current
200mA
Diode
Electronic Component
Current(Ir)
100nA@200V
(Vf)
1.25V@200mA
Power Dissipation(Pd)
200mW
Electronic Component
55℃~+150℃@(Tj)
Electronic Component
3000
Voltage Rating(Vr)
250V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S-LBAS21HT1G 产品概述

一、概述

S-LBAS21HT1G 为 LRC(乐山无线电)推出的一款独立式开关/整流二极管,采用 SOD-323 小封装,专为小电流高速切换和高压环境设计。器件在 200mA 工作电流下具有较低的正向压降(Vf),并具备快速恢复特性,适用于空间受限且需高频率开关的电路。

二、主要参数

  • 二极管配置:独立式
  • 正向压降:1.25V @ 200mA
  • 直流反向耐压(Vr):250V
  • 整流电流(Io):200mA
  • 功耗耗散(Pd):200mW
  • 反向电流(Ir):100nA @ 200V
  • 反向恢复时间(Trr):50ns
  • 非重复峰值浪涌电流(Ifsm):9A(单次浪涌)
  • 工作结温范围(Tj):-55℃ ~ +150℃
  • 封装:SOD-323

三、特性优势

  • 低正向压降(1.25V@200mA),在小电流整流场合可降低功率损耗。
  • 高耐压(250V),适合高压侧的保护与整流用途。
  • 极小的反向漏流(100nA@200V),适合要求高阻态稳定性的电路。
  • 快速恢复(Trr=50ns),适于高速开关、PWM 与开关电源的回路整流。
  • SOD-323 封装体积小,便于高密度贴片装配。

四、典型应用

  • 小功率开关电源及辅助电路整流
  • 高频信号开关与保护电路
  • 反向极性保护、钳位与钳位二极管
  • 显示驱动、通信设备及消费类电子的低电流整流

五、封装与热管理

SOD-323 小封装热阻较大,额定耗散功率为 200mW,在实际设计中应注意结到环境的热阻和 PCB 散热路径。连续工作电流建议不超过额定 200mA,若在较高环境温度或密集布板场合,应对功率做降额处理。

六、注意事项与可靠性

  • 避免在超过 Vr=250V 条件下长期施加反向电压。
  • 谨慎处理峰值浪涌,Ifsm=9A 为非重复峰值;重复冲击可影响寿命。
  • 推荐遵循厂家回流焊温度曲线,避免超温造成封装或焊点损伤。
  • 工作结温不超过 +150℃,长期高温会加剧漏电及寿命衰减。

七、使用建议

  • 在 PCB 布局中,尽量缩短二极管与开关器件之间的环路,减小寄生电感。
  • 对于高频整流,考虑并联或选用更高 Pd 的器件以减轻发热。
  • 在敏感模拟或高阻输入处使用时,注意反向漏电对电路偏置的影响。

S-LBAS21HT1G 以其低 Vf、高 Vr 和快速恢复性能,适合对体积、速度和高压兼容性有要求的小功率设计场景。

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