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LRC LBAT40-04LT1G LBAT40
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LBAT40-04LT1G
- Type
- LRC
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LBAT40-04LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0230658833
- Current
- 350mA
- Diode
- 1
- Current(Ir)
- 1uA
- (Vf)
- 370mV
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LBAT40-04LT1G 产品概述
一、产品简介
LBAT40-04LT1G 是乐山无线电（LRC）旗下的一款肖特基势垒二极管，采用 SOT-23 小封装设计，面向便携电源管理与高效率整流场景。该器件以极低的正向压降和较小的反向漏电流为主要卖点，适合对功耗和体积有严格要求的消费电子和工业控制设备。
二、主要特性
- 正向压降（Vf）：典型值 370 mV，导通损耗低，有利于提升转换效率与电池续航。
- 直流反向耐压（Vr）：40 V，适用于多数低压电源与反向保护场合。
- 反向电流（Ir）：典型 1 μA，低漏电有利于待机功耗控制。
- 非重复峰值浪涌电流（Ifsm）：1.5 A，可承受短时浪涌，应急能量吸收能力良好。
- 工作结温范围：-55 ℃ 至 +150 ℃，宽温区性能稳定，适合工业级应用。
- 封装：SOT-23，便于贴片组装和高密度布局。
三、典型电气与热特性说明
该肖特基器件以低 Vf 为核心优势，可在整流、降压器续流、倒灌保护等位置降低导通损耗。反向漏电随温度升高而增加，标称 1 μA 为常温下典型值，实际应用中请结合工作电压和环境温度评估漏电影响。SOT-23 封装热阻相对较高，连续正向电流能力受限，建议在布局时配合铜箔散热和必要的热评价；如需通过功率曲线与结温估算，请参考完整数据手册。
四、典型应用场景
- 移动设备与便携电源的电池充放电路径中，作为低损耗整流或反向保护器件。
- 开关电源（SMPS）输出整流或同步整流辅助器件，提升效率。
- USB / OTG 供电倒灌保护、GPIO 电源开关与电源路径选择。
- 工业控制与仪表中对低漏电与宽温特性有要求的电源防护。
五、封装与装配建议
SOT-23 小封装适合高密度 PCB 设计，焊接兼容标准回流工艺。由于器件在峰值浪涌或长时间大电流工况下受限于封装散热能力，建议在 PCB 设计时增大焊盘铜箔，必要时增加底层散热通道或连到地铜箔以降低结温。元件放置应避免靠近高热源元件，保证长期可靠性。
六、选型与使用建议
选择 LBAT40-04LT1G 时，如关注连续大电流能力或需更高浪涌承受力，应核对最大正向连续电流与封装热约束，或考虑更大封装或并联方案。对漏电极限严格的待机系统，应在最高工作温度下验证 Ir。最终设计上线前，建议取得完整数据手册，并在目标环境下做温度—电流—寿命验证。
如需替代货源或参考样片，建议与 LRC 或授权分销渠道联系获取最新规格书与可靠性报告。
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