WMSIC Electronic Components

LRC L2N7002SDW1T1G

LRC L2N7002SDW1T1G
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Product image

ModelL2N7002SDW1T1G
PackageSC-88(SOT-363)
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

19 specifications

Core information

Product name
LRC L2N7002SDW1T1G
Type
LRC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LRC
Electronic Component
L2N7002SDW1T1G
Electronic Component
1
Package
SC-88(SOT-363)
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.024g
Electronic Component
1
Electronic Component
BM0009226461
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

L2N7002SDW1T1G 产品概述

一、基本信息

L2N7002SDW1T1G 是一款广泛应用于电子设备中的场效应管（MOSFET），具有高效的开关性能和良好的热稳定性，特别适合于低功率、高效率的应用场景。它由乐山无线电（LRC）生产，采用相对小型的 SC-88 (SOT-363) 封装，因其优良的电气特性与结构设计而受到广泛欢迎。

二、规格参数

  1. 功率： 300mW
  2. 耐压： 60V
  3. 漏电流： 320mA
  4. 类型： N沟道（N-Channel）
  5. 封装类型： SOT-363

三、技术特性

L2N7002SDW1T1G 是一款 N沟道 MOSFET，具备优异的开关速度和电流承载能力。其最大漏电流为320mA，耐压高达60V，适合于各种中等电压的应用场景。此外，其较小的尺寸使其能够适配于空间受限的电路设计中。

四、应用领域

L2N7002SDW1T1G 由于其优良的电气性能，适合于以下几种典型应用：

  1. 开关电源： 该MOSFET可用于开关电源中的开关元件，发挥其低导通电阻带来的低损耗特性，从而提高电源效率。

  2. 信号开关： 在各种信号处理电路中，如音频、视频信号开关等场合，可以利用其高速切换特性，减少信号失真。

  3. 驱动电路： L2N7002SDW1T1G 适用在马达驱动及继电器驱动电路中，作为驱动开关元件来控制负载的开关状态。

  4. LED驱动： 由于其小型封装和高频性能，该MOSFET在LED驱动电路中表现出色，可以实现亮度调控及开关管理。

  5. 各种控制电路： 在家庭自动化、传感器接口等各种控制电路中，L2N7002SDW1T1G 也展现了其灵活性和可靠性。

五、优点与特点

  1. 高效率： 由于其低导通电阻，L2N7002SDW1T1G 能够在正常工作中保持较低的功率损耗，提升系统整体效率。

  2. 快速响应： 其切换速度快，适合需要频繁开关的应用，减少了开关损耗，提升了电路的工作效率。

  3. 低温漂移： 该MOSFET的参数相对稳定，具有较低的温度相关漂移，增强了其在各种环境下的适用性。

  4. 小封装设计： SOT-363 封装设计使其在空间受限的设计中同样能够轻松集成，满足现代电子设备对小型化的需求。

六、总结

L2N7002SDW1T1G 是一款高性能、低功耗的 N沟道 MOSFET，凭借其出色的电气特性和小巧的封装形式，已在多个领域赢得了广泛应用。无论是在开关电源、信号开关还是马达驱动中，它都能够提供稳定的性能，满足不断增长的市场需求。

随着电子技术的不断进步，未来 L2N7002SDW1T1G 和类似产品将在更多新兴应用中展现出其优越性，为现代电子设备提供更高效、更稳定的解决方案。通过不断优化和创新，乐山无线电将继续致力于推动MOSFET技术的发展，为客户提供更优质的产品与服务。

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