WMSIC Electronic Components

LRC LMBTA56LT1G

ModelLMBTA56LT1G
PackageSOT-23
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LMBTA56LT1G
Type
LRC
Minimum package
3000 个

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LRC
Electronic Component
LMBTA56LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0229934731
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
50MHz
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LMBTA56LT1G — 225mW、80V、500mA PNP 三极管产品概述

一、产品简介

LMBTA56LT1G 是乐山无线电(LRC)推出的一款小功耗 PNP 双极结晶体管,采用 SOT-23 表面贴装封装。器件在集电极电流最高 500mA、集射极击穿电压(Vceo)80V 的条件下工作,适用于中低功耗开关与信号放大场合。器件设计兼顾开关速度与线性放大特性,便于在紧凑 PCB 布局中使用。

二、主要电气参数(典型/数据给定)

  • 极性:PNP
  • 集电极电流 Ic:最大 500mA
  • 集射极击穿电压 Vceo:80V
  • 耗散功率 Pd:225mW(封装与环境条件相关)
  • 直流电流增益 hFE:约 100(测试条件 100mA, VCE=1V)
  • 特征频率 fT:50MHz(适中频率放大与开关应用)
  • 集电极截止电流 Icbo:约 100nA(低漏电)
  • 集射极饱和电压 VCE(sat):约 250mV(低饱和压,适合开关)
  • 工作温度范围:-55°C ~ +150°C
  • 射基极击穿电压 Vebo:4V(注意基-射反向耐压)

三、封装与热特性

LMBTA56LT1G 采用 SOT-23 小封装,适合自动贴片生产与空间受限设计。封装限制了可耗散的功率(225mW),因此在设计 PCB 时建议增大铜箔散热面积或采用散热通孔以保持结温在安全范围内。短时脉冲下可承受较高电流,但需遵守器件的安全工作区(SOA)。

四、应用场景

  • 高侧小功率开关:PNP 极性便于与电源正极直接连接,适合做高侧驱动或电源切换。
  • 线性放大:在要求中等电流和中等频率的模拟放大电路中表现良好。
  • 驱动小型继电器、指示灯或低电流继电器及继电器驱动级。
  • 与小信号 NPN 配合,可构成推挽输出或互补放大级。

五、使用注意事项与建议

  • 基极-射极反向击穿 Vebo 仅 4V,禁止在电路中对 BE 施加过高反向电压,避免损伤。
  • 在靠近最大 Ic 的工作点时注意功耗和结温,必要时采用并联或更大功率器件。
  • 参考数据表中的温度系数与极限参数进行裕量设计,避免在高温下长期接近极限值。
  • 若用于高频应用,请根据 fT=50MHz 评估增益裕量及负反馈设计,避免寄生振荡。

六、选型与替换建议

选择本型号时优先考虑对体积和正电源高侧控制的需求;若需更大功率或更高耗散能力,建议选用封装更大的器件;如需更高频率或更高电流增益,可比较同系列或其他厂商的规格以确认匹配。

LMBTA56LT1G 在小封装、较高耐压与中等电流能力之间提供了良好平衡,适合空间受限且需 80V 级别耐压的中低功耗应用。

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