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LRC LMBT4403WT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LMBT4403WT1G
- Type
- LRC
- Minimum package
- 3000 个
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LMBT4403WT1G
- Electronic Component
- 1
- Package
- SC-70
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0264600912
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 200MHz
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LMBT4403WT1G 产品概述
一、概述
LMBT4403WT1G 是一颗高频小功率 PNP 双极型晶体管，由 LRC（乐山无线电）提供，采用 SC-70 超小封装，适合对空间和成本敏感的便携或密集布局电路。该器件支持集电极电流 Ic 最大 600mA，集—射极击穿电压 Vceo 为 40V，适用于低压到中压电路中的开关与放大应用。
二、主要电气特性
- 晶体管类型：PNP
- 最大集电极电流 Ic：600 mA
- 集—射极击穿电压 Vceo：40 V
- 最大耗散功率 Pd：150 mW（封装限制，需注意热管理）
- 直流电流增益 hFE：约 30（中等放大倍数）
- 特征频率 fT：200 MHz（适应高速开关/小信号放大）
- 集电极截止电流 Icbo：100 nA（低漏电特性）
- 集—射极饱和电压 VCE(sat)：约 400 mV（在饱和导通时压降）
- 射—基极击穿电压 Vebo：5 V
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：SC-70（紧凑型，适合表贴工艺）
三、主要特性与优势
- 高频性能良好：fT 达 200 MHz，适合高频率小信号放大与快速开关。
- 中等电流能力：600 mA 的 Ic 在小封装下提供较好的驱动能力，适合驱动小负载或作为信号级开关。
- 低漏电流：Icbo 100 nA，保证在高阻态下的低泄漏和稳定性。
- 工作温度宽：-55 ℃ 至 +150 ℃，适配严苛环境应用。
四、典型应用场景
- 便携设备的开关与驱动电路；
- 小信号放大器与射频前端电路；
- 数字电路中的高频开关或电平转换；
- 空间受限的消费电子与通信终端。
五、封装与可靠性
SC-70 封装体积小、焊接方便，适合批量表面贴装。由于 Pd 仅 150 mW，推荐在 PCB 设计中尽量减低集电极—发射极压降并通过合适的铜箔面积与热传导路径进行散热设计，避免长期高功耗工作导致封装过热。
六、使用注意事项
- 避免基极—射极电压超过 Vebo（5 V），以防基区损伤；
- 注意功耗和结温限制，必要时采用降额使用（derating）；
- 在高频应用中注意寄生电容与布局走线，优化走线和旁路电容以获得稳定性能。
该器件为单只包装（数量：1 个 PNP），在选型与设计时请结合实际测试条件（温度、频率、工作点）验证性能。
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