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LRC LESDA6V1LLT1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LESDA6V1LLT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LESDA6V1LLT1G
- Electronic Component
- 1
- Package
- SOT-23
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Cj- Capacitor
- 140pF
- Electronic Component
- BM0227624273
- Operating Temperature
- 40℃~+125℃
- Voltage
- 16V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 20uA
- Voltage(VBR)
- 7.2V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LESDA6V1LLT1G 产品概述
一、产品简介
LESDA6V1LLT1G 是 LRC（乐山无线电）推出的一款 SOT-23 封装 ESD 防护二极管，针对工业和消费类电子设备的静电放电与脉冲浪涌保护而设计。器件在 -40℃~+125℃ 工作温度范围内保持稳定性能，满足现场各种环境下的瞬态抑制需求。
二、主要电气参数
- 钳位电压（Vclamp）：16V（典型，测试条件见规格书）
- 击穿电压（Vz）：7.2V
- 反向截止电压 Vrwm（反向工作电压）：5.25V（适合 ≤5V 级别电路保护）
- 峰值脉冲功率 Ppp：300W @ 8/20μs（单次脉冲能力）
- 峰值脉冲电流 Ipp：18A @ 8/20μs
- 反向电流 Ir：20μA（在 Vrwm 下）
- 结电容 Cj：140pF（典型值）
- 防护等级：满足 IEC 61000-4-2（ESD）标准
三、主要特点与应用场景
- 高脉冲吸收能力：300W@8/20μs 及 18A 峰值电流，可应对常见的插拔静电与脉冲浪涌。
- 适用于低电压轨保护：Vrwm 5.25V，适合 3.3V、5V 供电系统的端口与电源线保护。
- 封装小巧：SOT-23 适合表面贴装，便于贴片生产与空间受限设计。
- 典型应用：USB、UART、GPIO、传感器输入、电源输入等需 ESD/浪涌保护的接口（注意见下文对高速信号的建议）。
四、设计与布局建议
- 放置位置：尽量靠近受保护引脚（例如连接器或外部引线处），以缩短引线长度，减少寄生感抗。
- 接地处理：将器件的参考地通过低阻抗回路快速接地，必要时使用多通孔下穿到地平面。
- 与滤波器配合：若有外部滤波电容或串联电阻，合理匹配以避免钳位响应延迟或环路振荡。
- 高频信号注意：器件结电容约 140pF，较大电容会显著影响高频/高速数据信号（如高速 USB、差分高速链路）性能。因此对高带宽信号线应优先选择低电容保护器件或将 LESDA6V1 用于电源与低速接口。
五、可靠性与使用注意
- 极限条件：300W 为单次 8/20μs 能力，频繁或多次冲击需进行降额设计或并联/多级保护。
- 温度特性：器件可在 -40℃~+125℃ 工作，但在高温环境下应考虑泄漏电流和钳位电压的偏移。
- 漏电流：在 Vrwm 时 Ir ≈ 20μA，适合多数低功耗应用，但对超低泄漏场合需评估。
- 包装与焊接：SOT-23 适配常见 SMT 工艺，焊接热循环应符合制造工艺规范以保证长期可靠性。
六、结论
LESDA6V1LLT1G 提供了高能量吸收能力、小体积封装和适合 5V 级别电路的稳定防护，是保护接口及电源线免受 ESD 和脉冲浪涌的实用方案。设计时需兼顾其较高的结电容，合理选择使用位置以兼顾信号完整性与防护性能。若需在高速数据链路使用，请结合系统带宽与器件 Cj 评估或选用低电容替代品。
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