WMSIC Electronic Components

LRC LDTD123YLT1G

ModelLDTD123YLT1G
PackageSOT-23
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LDTD123YLT1G
Type
LRC
Minimum package
3000

Technical parameters

Electronic Component
LRC
Electronic Component
LDTD123YLT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0265832886
Operating Temperature
55℃~+150℃
Resistor
4.5
Resistor
2.2kΩ
Power Dissipation(Pd)
200mW
Electronic Component
3000
Collector Current(Ic)
500mA
Output Voltage(VO(on))
300mV

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LDTD123YLT1G — 数字晶体管(NPN、预偏置)产品概述

一、概述

LDTD123YLT1G 是乐山无线电(LRC)推出的一款SOT-23封装数字晶体管,内部集成偏置电阻网络,面向单芯片逻辑驱动与通用开关场合。器件为NPN 预偏置型,具有50V的集—射极击穿电压(Vceo)、最高500mA的集电极电流能力,适合驱动LED、小型继电器线圈、光耦与一般负载的低成本解决方案。

二、主要电气参数

  • 集—射极击穿电压 Vceo:50V
  • 最大集电极电流 Ic:500mA(受封装热耗散与工作条件限制)
  • 耗散功率 Pd:200mW(SOT-23 封装热限制,注意散热与功耗预算)
  • 直流电流增益 hFE:56(在 Ic=50mA、Vce=5V 条件下)
  • 开通输入电压 VI(on):约 2.0V(达到导通条件的典型门槛)
  • 关闭输入电压 VI(off):最大 300mV(低于该电平可保证关闭)
  • 输出饱和电压 VO(on):典型 300mV(导通时集电极-发射极饱和压降)
  • 输入电阻:2.2kΩ(器件内置电阻)
  • 电阻比率:4.5(表示内置偏置网络的比例关系,用以提供默认关断或上拉行为)
  • 工作温度范围:-55℃ ~ +150℃

三、器件特点与优势

  • 集成偏置电阻:免去外部基极限流/下拉电阻,简化外围电路,节省PCB空间与装配成本。
  • 低饱和压降:VO(on) 约 300mV,降低开关损耗,适合较大电流下的高效开关。
  • 宽电压和温度范围:Vceo 50V 与-55℃~+150℃工作温度,适应性强。
  • 封装小巧:SOT-23 便于表贴,适合密集布局和自动化贴装生产。

四、典型应用

  • MCU/GPIO 直接驱动指示灯、微型继电器或有源蜂鸣器;
  • 光耦、继电器驱动和开关控制电路;
  • 电平移位与缓冲,作为数字输出级的开关元件;
  • 工业控制、通讯设备和家用电器的通用开关单元。

五、使用注意事项与设计建议

  • 功耗预算:器件Pd仅200mW,虽然Ic峰值可达500mA,但持续电流受瞬态VCE与功耗限制;在大电流应用(例如接近500mA)应确保VCE很低或采用并联/更高功耗封装,以避免过热。
  • 引脚定义:典型SOT-23引脚配置为 1=输入(B),2=发射极(E,接地),3=集电极(C,输出),设计时务必以厂商数据手册为准确认引脚。
  • 输入门槛:VI(on)≈2V,适合直接被常见单片机IO驱动;低电平关断阈值VI(off)≤300mV,能提供可靠的关闭动作。
  • PCB布局:保持基极与集电极连接线短,利于散热与降低寄生电感;如频繁开关或大电流工作,考虑在集电极侧增加铜箔面积以提升散热。
  • 可靠性与防静电:器件为半导体器件,应做好防静电保护与按回流焊工艺规范处理;储存与使用遵循相关包装和回流曲线说明。

六、总结

LDTD123YLT1G 为一款功能齐全的预偏置NPN数字晶体管,适合需要节省外围元件与空间的场合。凭借集成电阻网络、可观的开关能力与SOT-23封装,它在微控制器驱动与通用开关应用中具备良好性价比。工程使用时,应重点关注热管理与在高电流场合下的功耗限制,参考完整数据手册能获得更精确的极限与典型特性。

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