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LRC L8550PLT1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC L8550PLT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- L8550PLT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0264382380
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 800mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
L8550PLT1G PNP型双极型晶体管产品概述
一、产品核心定位与基本属性
L8550PLT1G是乐山无线电（LRC） 推出的PNP型小信号双极型晶体管（BJT），属于通用型分立器件，主打小体积、中电流、宽温适用设计。该型号采用SOT-23表面贴装封装，单颗供货，兼顾开关控制与线性放大双重功能，是消费电子、小型工业控制等场景的低成本高可靠性优选器件。
二、关键电性能参数详解
该型号电性能围绕“低功耗、中负载、稳定增益”设计，核心参数如下：
- 电压耐受：集射极击穿电压（VCEO）达25V，适配常见低压直流电源；射基极击穿电压（VEBO）为5V，避免反向过压损伤发射结。
- 电流与漏电流：最大集电极连续电流（IC）800mA，满足中等功率负载驱动；集电极截止电流（ICBO）仅150nA，漏电流极低，静态功耗小。
- 功率与饱和特性：最大耗散功率（Pd）300mW，匹配SOT-23封装散热能力；集射极饱和电压（VCE(sat)）在800mA负载下仅500mV，开关损耗低。
- 增益稳定性：直流电流增益（hFE）在100mA集电极电流、1V集射极电压下稳定为100，线性区放大性能可靠。
三、封装与可靠性设计
L8550PLT1G采用SOT-23小型封装，体积紧凑（约2.9×1.6×1.1mm），适配高密度PCB设计，便于小型化设备集成。引脚遵循标准定义（1脚：基极B，2脚：发射极E，3脚：集电极C），焊接与电路设计便捷。
可靠性方面，支持**-55℃~+150℃宽温范围**，覆盖工业级与消费级环境；采用LRC成熟封装工艺，抗振动、耐老化，长期运行稳定。
四、典型应用场景
结合性能特点，该型号典型应用包括：
- 消费电子：小型音频前置放大（蓝牙音箱、耳机）、LED小灯驱动（键盘背光、指示灯）；
- 开关控制：小功率继电器驱动、电池管理开关（低功耗电源切换）；
- 信号放大：传感器弱信号放大（温度、光敏传感器）、简单线性稳压辅助放大；
- 小型工业控制：低电压控制模块信号驱动、800mA以内小型电机低速控制。
五、品牌与质量背书
LRC（乐山无线电）是国内半导体分立器件龙头厂商，拥有数十年生产经验，产品覆盖家电、通信、汽车电子等领域。L8550PLT1G符合RoHS环保标准，通过温度循环、老化等可靠性测试，质量稳定，是替代进口同类产品的高性价比选择。
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