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LRC S-LMBT5551LT1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC S-LMBT5551LT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- S-LMBT5551LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0229962913
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S-LMBT5551LT1G 产品概述
一、产品简介
S-LMBT5551LT1G 是一款高压小信号 NPN 三极管，来自 LRC（乐山无线电），采用 SOT-23 封装。器件具有较高的集电极击穿电压和适中的电流承受能力，适合在高压开关、信号放大及保护电路中作为通用高压开关元件使用。
二、主要参数
- 晶体管类型：NPN
- 集电极电流 Ic：最大 600 mA（脉冲条件下应参考数据手册）
- 集—射击穿电压 Vceo：160 V
- 耗散功率 Pd：常见资料标注约 300 mW（亦有部分资料标注 225 mW，实际可用功率依封装散热条件与测试环境而异）
- 直流电流增益 hFE：约 80（测试条件 Ic=1.0 mA，Vce=5.0 V）
- 集电极截止电流 Icbo：典型 50 nA
- 集电极饱和电压 VCE(sat)：约 200 mV（示例测试条件 IC=50 mA，IB=5 mA）
- 工作温度范围：-55 ℃ ~ +150 ℃
- 基-发击穿电压 Vebo：6 V
三、特性与优势
- 高 Vceo（160 V），适合高压侧的小信号开关与放大场合。
- 低漏电流（Icbo≈50 nA），在高阻态和微弱信号场合噪声贡献小。
- 在低至中等电流工作点有良好增益（hFE≈80），便于作为前级放大或驱动级。
- SOT-23 小封装利于表贴自动化生产，适配便携和空间受限的设计。
四、典型应用
- 开关电源及高压偏置电路的高压开关或保护元件。
- 显示器、电源模块中的高压驱动/切换。
- 通用小信号放大（高压耐压场合）。
- 过流检测和保护电路（需注意热耗散与脉冲限流）。
五、封装与引脚（示例）
- 封装：SOT-23（表面贴装）
- 常见引脚定义（请以具体数据手册为准）：
- Pin1：Base（基极）
- Pin2：Emitter（发射极）
- Pin3：Collector（集电极）
六、使用与热管理注意事项
- 避免对基-发极施加超过 Vebo=6 V 的反向电压，以防损坏。
- 虽然 Ic 标称可达 600 mA，但 SOT-23 封装下连续大电流受限于散热能力，应通过增加 PCB 铜面积或散热层、限制占空比或采用脉冲工作以保障可靠性。
- 器件功耗须随环境温度降额使用，设计时按实际 PCB 热阻并参考厂商数据手册确定最大稳态功耗。
- 饱和区驱动时注意基极电流与功耗的平衡，避免长期在高饱和度下工作导致过热。
以上为 S-LMBT5551LT1G 的概述与使用建议，具体电气特性、极限值及波特测试条件请以 LRC 提供的正式数据手册为准。
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