WMSIC Electronic Components

LRC LP9435LT1G

ModelLP9435LT1G
PackageSOT-23
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LP9435LT1G
Type
LRC
Minimum package
3000

Technical parameters

Electronic Component
LRC
Electronic Component
LP9435LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0228680477
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
644pF
Output Capacitor(Coss)
65pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LP9435LT1G 产品概述

一、产品简介

LP9435LT1G 是乐山无线电(LRC)推出的一款 P 沟道场效应管(MOSFET),封装为 SOT-23,适用于 30V 及以下电源域的高侧开关与电源路径管理。器件尺寸小巧、驱动电荷适中,适合空间受限的便携设备或电源控制模块。

二、主要规格(典型/最大)

  • 类型:P 沟道 MOSFET(单片,1 个)
  • 漏源耐压:Vdss = 30V
  • 连续漏极电流:Id = 5.3A(封装与散热条件下)
  • 导通电阻:RDS(on) = 100 mΩ @ Vgs = 4.5V(P 沟道,注意 Vgs 为负向驱动)
  • 功耗耗散:Pd = 1.4W(SOT-23 封装热限制)
  • 阈值电压:|Vgs(th)| ≈ 3V @ ID=250µA(典型)
  • 总门电荷:Qg = 10 nC @ 10V(用于估算驱动能量)
  • 输入电容:Ciss = 644 pF
  • 输出电容:Coss = 65 pF
  • 反向传输电容(米勒):Crss = 51 pF
  • 工作结温:Tj = -55℃ ~ +150℃
  • 封装:SOT-23

三、性能特点与电气特性要点

  • 低至 100 mΩ 的导通电阻在 4.5V 驱动下可提供较低的导通损耗,适合中等电流开关应用。
  • 较高的阈值(约 3V)提示在靠近阈值电压驱动时导通不会很强,建议提供充分的负向 Vgs(例如 -4.5V)以确保低 RDS(on)。
  • Qg 与 Ciss 较大,说明在需要频繁或高速开关时门极驱动能量与驱动器能力应被考虑;Crss 影响转换期间的米勒效应,可能限制开关速度。
  • 封装热耗散 Pd=1.4W 表明在 SOT-23 封装下,长时间大电流工作受限于散热条件,实际可通过 PCB 铜箔、热垫扩散提高散热能力。

四、典型应用场景

  • 移动设备与电池供电系统的高侧负载开关与电源路径控制(如电池选择、反向阻流保护)。
  • 中低频率的开关电源前置或旁路开关(需关注开关损耗)。
  • LED 驱动、背光控制、电源断路/软启动等需要正侧断开的场合。
  • 节能型电源管理和负载选择电路。

五、使用建议与设计注意事项

  • 作为 P 沟道器件,门极需向源方向施加负电压以导通,设计时应保证驱动电平符合器件要求并避免超过最大 Vgs(请参阅完整数据手册)。
  • 对于大电流或连续导通场合,应优化 PCB 散热(加大铜箔、使用过孔热通道),以避免结温超限导致性能下降。
  • 在开关应用中建议串联门极电阻以抑制振荡并降低 EMI;并考虑在门极或源端加上吸收/RC 网络以缓解米勒效应。
  • 由于 Ciss/Crss 较大,高速驱动器应具备足够电流能力以保证切换速度和效率。

如需器件完整的绝对最大额定值、详细典型特性曲线及引脚定义,请参考 LP9435LT1G 的完整数据手册或联系我们获取原厂技术文档。

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