WMSIC Electronic Components

LRC LBC858BLT1G

ModelLBC858BLT1G
PackageSOT-23(SOT-23-3)
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LBC858BLT1G
Type
LRC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LRC
Electronic Component
LBC858BLT1G
Electronic Component
1
Package
SOT-23(SOT-23-3)
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0264844042
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LBC858BLT1G PNP型双极晶体管产品概述

一、产品基本定位与属性

LBC858BLT1G是乐山无线电(LRC)推出的PNP型小信号双极晶体管(BJT),属于通用型器件,专为低功耗、小型化电路设计。产品采用SOT-23-3紧凑型贴片封装,体积小、重量轻,适配自动化贴片生产,广泛应用于消费电子、工业控制等领域的信号放大与开关场景。

二、核心电性能参数详解

2.1 极限参数(安全工作边界)

极限参数是器件正常工作的最大允许值,需严格控制以避免损坏:

  • 集射极击穿电压(VCEO):30V(基极开路时,集电极与发射极间的最大反向耐压);
  • 集电极连续电流(IC):100mA(集电极可长期稳定输出的最大电流);
  • 耗散功率(Pd):225mW(SOT-23封装下,器件允许的最大耗散功率,随温度升高需降额);
  • 射基极击穿电压(VEBO):5V(集电极开路时,发射极与基极间的最大反向耐压);
  • 工作温度范围:-55℃~+150℃(覆盖工业级高低温环境要求)。

2.2 直流特性参数

直流参数反映器件在静态工作点的性能,关键指标包括:

  • 直流电流增益(hFE):典型值220(测试条件:IC=2.0mA,VCE=5.0V)——增益较高,适合弱信号放大场景;
  • 集电极截止电流(ICBO):最大值4μA(基极开路,VCB=30V时)——漏电流低,静态功耗小,稳定性好;
  • 集射极饱和电压(VCE(sat)):典型值650mV(测试条件:IC=10mA,IB=100μA)——饱和压降低,开关时功耗小,响应速度快。

2.3 交流特性参数

交流参数决定器件的高频性能:

  • 特征频率(fT):100MHz(测试条件:VCE=5.0V,IC=10mA)——适用于中低频(<100MHz)信号放大,如音频、传感器信号处理。

三、封装与引脚配置

LBC858BLT1G采用SOT-23-3贴片封装,尺寸为1.6mm×1.2mm×0.8mm(典型值),引脚定义如下(从顶部俯视):

  • 引脚1:发射极(E);
  • 引脚2:基极(B);
  • 引脚3:集电极(C)。

该封装具有以下优势:

  • 体积小,适配高密度PCB设计;
  • 散热性能稳定(符合225mW耗散功率要求);
  • 兼容标准贴片设备,生产效率高。

四、典型应用场景

结合参数特性,LBC858BLT1G的核心应用场景包括:

  1. 小信号放大电路:如音频前置放大器(增益220可有效放大微弱音频信号)、传感器信号调理(如温度、压力传感器的输出放大);
  2. 低功耗开关电路:如LED指示灯驱动(IC=100mA可满足小功率LED需求)、逻辑电平转换(适配3.3V/5V系统间的电平匹配);
  3. 电源管理辅助电路:如电压基准缓冲、小电流恒流源(ICBO低,恒流精度高);
  4. 消费电子终端:如智能手机、蓝牙耳机、可穿戴设备的信号处理模块(小型化封装适配便携设备)。

五、可靠性与选型价值

5.1 可靠性优势

  • 宽温度范围(-55℃~+150℃):可在极端环境下稳定工作,适配工业控制、车载辅助电路(若符合汽车级认证,需确认具体版本);
  • 低漏电流(ICBO=4μA):静态功耗低,延长电池续航(适用于便携设备);
  • 高增益一致性:hFE典型值220,批量生产一致性好,减少电路调试工作量。

5.2 选型替代参考

可作为以下器件的替代选型(需匹配参数):

  • 2N3906(PNP,IC=100mA,VCEO=25V,hFE=100):LBC858BLT1G增益更高,耐压略高,适合需要更高放大倍数的场景;
  • BC858(同类PNP晶体管):参数接近,可根据供货周期、成本灵活选择。

六、品牌与供货说明

LBC858BLT1G由乐山无线电(LRC)生产,该厂商是国内知名半导体企业,产品通过ISO9001、IATF16949等认证,供货稳定,广泛应用于国内外电子厂商。

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