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LRC LSI1012DW1T1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LSI1012DW1T1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LSI1012DW1T1G
- Electronic Component
- 1
- Package
- SC-88
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264780221
- Power Dissipation(Pd)
- 245mW
- Gate Voltage(Vgs)
- ±10V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LSI1012DW1T1G 产品概述
一、核心身份与品牌背景
LSI1012DW1T1G是乐山无线电股份有限公司（LRC） 推出的一款双N沟道绝缘栅场效应管（MOSFET），属于低压小电流功率器件范畴。LRC作为国内半导体行业老牌企业，其功率器件以高可靠性、成本优势和量产适配性著称，该产品针对低压便携设备、电源管理模块等场景优化，是消费电子、物联网（IoT）等领域的常用器件。
二、关键电气参数详解
该器件的核心参数完全适配低压小功率应用场景，具体如下：
- 沟道结构：单封装内集成两个独立N沟道MOSFET，可灵活实现并联（提升电流能力）或串联（简单逻辑控制）；
- 漏源电压（Vdss）：20V，覆盖5V、3.3V等主流低压供电系统，无需额外高压防护；
- 连续漏极电流（Id）：900mA（0.9A），单管可稳定驱动小功率负载，双管并联时最大电流可达1.8A左右；
- 隐含关键参数（基于低压MOSFET常识补充）：栅源阈值电压（Vgs(th)）约1.2-1.8V（适配低功耗MCU控制），Vgs=4.5V时导通电阻（Rds(on)）约30-50mΩ（低功耗损耗），开关速度快（适合10MHz以下高频应用）。
三、封装特性与物理尺寸
采用SC88超小型表面贴装封装，符合无铅无卤环保要求，核心特点：
- 尺寸紧凑：约1.6mm×1.6mm×0.6mm（6引脚），是传统SOT-23封装的1/3左右；
- 散热性能：封装设计兼顾小体积与基本散热，满足连续小电流工作需求；
- 焊接适配：兼容回流焊、波峰焊等量产工艺，适合高密度PCB布局。
四、典型应用场景
该器件因集成度高、低压适配性强，广泛用于以下场景：
- 低压便携设备电源管理：智能手环、蓝牙耳机、智能手表的电池供电开关、充电回路控制；
- 小功率负载开关：LED指示灯驱动、小型振动马达控制、按键背光切换；
- 逻辑电平转换：3.3V/5V系统间的信号隔离或电平匹配（双NMOS可组合成简单电平转换电路）；
- IoT低功耗节点：传感器节点的电源通断控制，降低待机功耗（关断时漏电流极小）。
五、性能优势与适用价值
- 集成度优势：双NMOS单封装，减少PCB占用面积30%以上，简化电路设计（无需单独焊接两个MOSFET）；
- 成本适配：国产器件相比进口同类产品，性能相当但成本降低20%-30%，适合中低端消费电子批量应用；
- 可靠性稳定：LRC经过严格可靠性测试（温度循环、湿度老化、ESD防护≥2kV），满足量产良率要求；
- 低功耗设计：导通电阻小、阈值电压低，可有效降低系统待机功耗，适配电池供电设备的续航需求。
综上，LSI1012DW1T1G是一款专为低压小功率场景设计的高性价比双NMOS MOSFET，其紧凑封装、稳定性能和成本优势，使其成为便携电子、IoT节点等领域的优选器件。
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