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LGE BZT52B12
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE BZT52B12
- Type
- LGE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- BZT52B12
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.246g
- Electronic Component
- 1
- (Zzk)
- 90Ω
- (Zzt)
- 20Ω
- Electronic Component
- BM0228289760
- Diode
- 1
- Current(Ir)
- 90nA@8V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 11.8V~12.2V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52B12 产品概述
一、产品简介
BZT52B12 是一款独立式稳压（二极管）器件，标称稳压值为 12V，实际稳压范围为 11.8V〜12.2V，适用于需要低功耗、小封装电压基准或简易稳压的场合。该型号由 LGE（鲁光）生产，封装为 SOD-123，体积小、便于表面贴装。
二、主要特性
- 稳压值（标称）：12V（范围 11.8V〜12.2V）
- 反向漏电流 Ir：90nA @ 8V（典型低漏电）
- 最大耗散功率 Pd：500mW（环境与散热相关）
- 动态阻抗：Zzt = 20Ω（测试区域），Zzk = 90Ω（击穿弯曲区）
- 封装：SOD-123，独立式（表贴）
三、电气参数说明
- 稳压范围表明在规定测试条件下输出电压的典型波动区间，设计时应留有裕量以满足系统精度要求。
- 反向漏电流 90nA 在低电流和高阻抗电路中有利于降低静态功耗和误差。
- 动态阻抗 Zzt（低阻抗值）表示在正常工作区稳压能力较好，Zzk（较大）反映了进入击穿弯曲区时电压随电流变化更明显。
四、热与功耗考量
器件最大耗散功率为 500mW，因此在 12V 稳压点的极限直流电流约为 Pd/V ≈ 0.5W / 12V ≈ 41.7mA。但实际应用中应考虑封装散热、PCB 铜箔面积及环境温度，推荐工作电流远低于极限值以保证可靠性与温度稳定性。
五、封装与安装
SOD-123 小型表贴封装适合高密度 PCB。贴装时建议：
- 使用适当的焊盘尺寸和散热铜箔以提升热扩散；
- 避免长期在 Pd 附近工作，必要时使用散热加强措施；
- 遵循厂家回流焊曲线与 ESD 防护规范。
六、典型应用
- 小功率稳压参考：为传感器、MCU 外设或模拟前端提供简单基准电压；
- 电压钳位与浪涌保护：在输入或信号线上限制过压；
- 偏置与串联保护电路：为晶体管或运放提供稳定偏置源。
七、选型与注意事项
- 若需更低噪声或更严格的电压精度，建议选用稳压芯片或基准源；
- 设计中应加串联限流电阻或恒流源，以控制功耗，避免超过 Pd；
- 若工作温度或长时间负载较高，需评估热升与可靠性数据；温度系数与频响特性应参考完整数据手册（如需更详细参数请咨询供应商）。
八、总结
BZT52B12（LGE，SOD-123）适合用于体积受限、功耗低且对稳压精度要求中等的应用场景。凭借低漏电流与小封装特性，可在便携设备、传感与偏置电路中实现成本效益较高的稳压或钳位功能。设计时应重视功耗与散热约束，合理配置限流与 PCB 散热以确保长期稳定运行。
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