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LGE BAS21H
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE BAS21H
- Type
- LGE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- BAS21H
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Switch Diode
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM0257672029
- Current
- 200mA
- Diode
- Electronic Component
- Current(Ir)
- 100nA
- (Vf)
- 1.25V@200mA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAS21H 产品概述
一、产品简介
BAS21H 为独立式开关二极管，封装为 SOD-323，品牌 LGE(鲁光)。该器件面向小信号高压开关应用，具备 200V 反向耐压、200mA 连续整流能力及快速恢复特性，适合空间受限的表面贴装电路中用于高压开关、脉冲整流与保护电路。
二、主要特性
- 独立式 SOD-323 小封装，节省 PCB 面积；
- 正向压降 Vf = 1.25V @ If = 200mA，适合中等电流开关场合；
- 直流反向耐压 Vr = 200V，可承受较高工作电压；
- 反向漏电流 Ir = 100nA（常温），低泄漏利于高阻抗及低功耗系统；
- 反向恢复时间 Trr = 50ns，适合中高速开关应用；
- 非重复峰值浪涌电流 Ifsm = 625mA，能承受瞬态冲击；
- 工作结温范围 -55℃ 至 +150℃，耐热性良好。
三、电气参数（典型/额定）
- 正向压降：1.25V @ 200mA；
- 额定整流电流：200mA；
- 耗散功率 Pd：200mW；
- 直流反向耐压 Vr：200V；
- 反向电流 Ir：100nA（常温）；
- 反向恢复时间 Trr：50ns；
- 峰值浪涌 Ifsm：625mA；
- 结温范围：-55℃ ~ +150℃。
四、典型应用
- 开关电源次级或高压侧小信号整流；
- 功率管理与电压钳位、保护电路；
- 高频脉冲信号整形、采样保持电路；
- 通信设备、仪器仪表中的高压开关与钳位元件。
五、热特性与封装
SOD-323 为微小封装，热阻相对较高，器件耗散功率 Pd = 200mW 在无外部散热时应谨慎评估。建议在 PCB 设计中增加铜箔散热区、缩短热流路径并避免长期满载工作，以防结温超限影响可靠性。封装引脚极性通常在产品图纸或封装标识中注明，安装时注意方向。
六、设计注意事项
- 请根据最大结温与环境温度进行功率降额计算，保证长期可靠；
- 高频开关场合注意 Trr 对电路效率及过冲的影响，必要时并联缓冲或 RC 抑制；
- 若需更低正向压降或更快恢复时间，可考虑 Schottky 或高速肖特基/快速恢复替代器件；
- 焊接与回流工艺应遵循厂家热循环规范，避免超温损伤。
七、采购与替代建议
品牌：LGE(鲁光)。封装：SOD-323，便于贴片自动化装配。选型时如需更高电流或更低 Vf，可查询同类 300mA 以上或 Schottky 系列器件；如需更快响应则选用 Trr < 10ns 的专用高速二极管。
如需原理图示例、热设计计算或 PCB 封装尺寸图，可提供具体请求以便进一步支持。
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