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LGE 2SK3018
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE 2SK3018
- Type
- LGE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- 2SK3018
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0226478483
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 13pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK3018 产品概述
2SK3018 是鲁光（LGE）推出的一款微功率 N 沟场效应管（MOSFET），单只器件，适用于便携式与小信号开关场合。器件以 SOT-323 超小封装交付，具有低输入电容与较低的导通电阻特性，适合对体积和快速开关性能有要求的电路设计。
一、主要特性
- 类型：N 沟 MOSFET（单个）
- 最大漏-源电压 Vdss：30 V
- 连续漏极电流 Id：100 mA
- 导通电阻 RDS(on)：8 Ω @ Vgs = 4 V
- 功耗 Pd：200 mW
- 阈值电压 Vgs(th)：约 1.1 V
- 输入电容 Ciss：13 pF；反向传输电容 Crss：4 pF
- 工作温度范围：-55 ℃ 至 +150 ℃
- 封装：SOT-323（极小体积）
- 品牌：LGE（鲁光）
二、典型电气与使用说明
- 门极驱动：阈值电压约 1.1 V，但 RDS(on) 以 Vgs=4 V 标定；若需较低导通损耗，建议门极驱动接近 4 V。若门极仅驱动至 1.8–3.3 V，导通电阻会显著上升，应在电路中考虑压降与发热。
- 开关性能：Ciss = 13 pF、Crss = 4 pF，栅极电容较小，利于快速切换和降低驱动功耗，适合高频小信号开关。
- 热设计：器件 Pd = 200 mW（封装限制），SOT-323 散热能力有限，长时间接近最大功耗会导致结温升高。建议在 PCB 布局中提供合适的铜箔面积并控制环境温度。
三、典型应用场景
- 低电流负载开关（传感器电源、背光、指示灯等）
- 便携式设备的电源管理与电池隔离
- 信号开关、模拟矩阵中的小信号控制
- 电平转换与高侧小电流开关（配合驱动电路使用）
四、封装与可靠性
- 封装：SOT-323，适合空间受限的移动与消费类电子产品。
- 封装注意：SOT-323 对回流焊与湿度敏感，建议遵循厂家提供的焊接与储存规范（防潮处理、回流温度曲线等）。
五、使用建议与选型提示
- 若系统中电流或功耗接近器件极限，应选用更大功率或更低 RDS(on) 的封装型号；若需更低导通损耗，优先选择 Vgs 标称较低且 RDS(on) 更小的 MOSFET。
- 在设计中预留足够的安全余量，避免器件长期工作在高结温下。对关键信号路径，可做温度漂移与功耗仿真验证。
- 请参考完整数据手册确认最大门极电压（Vgs max）、瞬态特性及封装热阻等详细参数，确保设计安全可靠。
总结：2SK3018 以其小体积、低输入电容和适合 30 V 级别的小电流开关特性，在便携设备与小信号开关应用中具有良好性价比。设计时重点考虑门极驱动电压与散热限制，便可发挥其最佳性能。
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