WMSIC Electronic Components

Leiditech ESDBKV3V3D3

ModelESDBKV3V3D3
PackageSOD-323
BrandLeiditech
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Leiditech ESDBKV3V3D3
Type
LEIDITECH
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LEIDITECH
Electronic Component
ESDBKV3V3D3
Electronic Component
1
Package
SOD-323
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.013g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.6pF
Electronic Component
BM0264463888
Operating Temperature
55℃~+125℃
Voltage
20V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
200nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDBKV3V3D3 产品概述

一、产品简介

ESDBKV3V3D3 是雷卯电子(Leiditech)推出的一款低容、高可靠性的单路 ESD/浪涌保护二极管,专为 3.3V 工作电压的电源线和高速数据线保护设计。器件采用 SOD-323 小型封装,适合空间受限的消费电子产品,尤其是手机、USB 接口及便携设备的外部接口防护。

二、主要参数

  • 反向截止电压 Vrwm:3.3V
  • 击穿电压 VBR:4V(典型/标称)
  • 钳位电压(Vc):20V(典型测试条件)
  • 峰值脉冲功率 Ppp:400W @ 8/20 μs
  • 反向电流 Ir:200 nA(在 Vrwm 下,典型量级)
  • 结电容 Cj:0.6 pF(典型值,适合高速信号)
  • 通道数:单路
  • 工作温度范围:-55℃ ~ +125℃
  • 防护等级:符合 IEC 61000-4-2 / IEC 61000-4-4 / IEC 61000-4-5 标准
  • 封装:SOD-323

三、关键特性

  • 超低电容(0.6 pF):对高速数据线(如 USB、CLK、TX/RX)影响极小,保持信号完整性。
  • 超低漏电(nA 级):适合低功耗系统与电源线保护,降低静态功耗影响。
  • 高能量吸收(400W @ 8/20 μs):能承受典型工业浪涌和脉冲能量,提升系统鲁棒性。
  • 低钳位电压:在瞬态事件中能有效限制电压尖峰,保护下游芯片。
  • 宽温度工作范围:适应工业级环境要求。

四、典型应用

  • 手机与移动终端的 USB、数据线接口防护
  • USB 端口(包括 USB2.0/3.0 前端保护)
  • 板级信号线、I/O 接口与串行总线(UART、I2C、SPI 等)保护
  • 便携式设备与消费类电子的外部接口防护

五、封装与机械信息

  • 封装形式:SOD-323,小型表面贴装,利于自动贴装与回流焊接。
  • 占位面积小,适合多通道并排布置或空间受限的设计环境。
  • 推荐在连接器或接口处尽可能靠近受保护引脚放置,以缩短非受保护段的引线长度。

六、PCB 布局与使用建议

  • 器件应尽量靠近需保护的接口或连接器放置,缩短走线以降低串扰和阻抗。
  • 将器件负端(GND)通过低阻抗回流路径接地,必要时增加地平面和过孔以提高散热与回流能力。
  • 对高速差分信号,注意保持对称布线,避免器件引脚到差分对的不对称影响。
  • 对功率和地线做良好去耦,避免瞬态能量在板间转移导致多点故障。

七、可靠性与认证

ESDBKV3V3D3 针对 ESD(IEC 61000-4-2)、EFT(IEC 61000-4-4)及浪涌(IEC 61000-4-5)等典型工业/消费类电磁兼容事件进行了设计,适合需要经过整机认证的产品。器件可在 -55℃ 至 +125℃ 的宽温范围内稳定工作,满足多种应用场景的可靠性要求。

八、选型提示与结论

ESDBKV3V3D3 以其 0.6 pF 的超低结电容和 nA 级低泄漏特性,十分适合用于 3.3V 电源和高速数据线的局部保护。在选型时应关注钳位电压与被保护器件耐受电压的匹配、器件响应能力与板级布局。对于需要在空间受限且对信号完整性要求高的移动设备与接口防护场景,ESDBKV3V3D3 是一个平衡性能与成本的可靠选择。若需要并联多路保护或更高能量吸收,应结合系统实际浪涌能量和热管理做进一步设计验证。

品牌:Leiditech(雷卯电子)型号:ESDBKV3V3D3,封装:SOD-323。若需更详细的电气特性曲线、封装图或参考原理图,请联系供应商获取完整数据手册。

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