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Leiditech PTVSHC3N12VU
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Leiditech PTVSHC3N12VU
- Type
- LEIDITECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LEIDITECH
- Electronic Component
- PTVSHC3N12VU
- Electronic Component
- 1
- Package
- DFN2020-3
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.095g
- Electronic Component
- 1
- Cj- Capacitor
- 1.5nF
- Electronic Component
- BM0264463885
- Operating Temperature
- 55℃~+125℃
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 13V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PTVSHC3N12VU 产品概述
一、产品简介
PTVSHC3N12VU 为 Leiditech（雷卯电子）出品的单向 TVS（瞬态电压抑制）二极管，封装为 DFN2020-3，专为保护 12V 级电源与信号线免受静电放电（ESD）、浪涌（Surge）及脉冲干扰而设计。器件结合高能量吸收能力与小型化封装，适合空间受限的表贴电路板应用。
二、主要参数
- 反向截止电压（Vrwm）：12 V（适配 12V 工况）
- 击穿电压（VBR）：13 V
- 峰值脉冲功率（Ppp）：5.4 kW @ 8/20 μs（高能量吸收能力）
- 反向电流（Ir）：≤1 μA（低泄漏，适合待机/精密电路）
- 结电容（Cj）：约 1.5 nF（对高速信号有影响）
- 工作温度范围：-55 ℃ ~ +125 ℃
- 防护等级：符合 IEC 61000-4-2（ESD）、IEC 61000-4-4（EFT）、IEC 61000-4-5（Surge）
三、功能与典型应用
该器件针对瞬态过压事件提供低阻路径，将危险能量钳制到安全电平，从而保护下游元件。典型应用场景包括：
- 汽车电子低压线路（12V 辅助电源、传感器供电）
- 工业控制与自动化设备的电源保护
- 消费类电子如电源适配器、充电器、路由器等的输入端防护
- I/O 接口与稳压模块的浪涌抑制（注意结电容对高频信号的影响）
四、封装与安装建议
DFN2020-3 小尺寸封装便于高密度 PCB 布局。安装时建议：
- 将器件阴极（一般为中间大焊盘或标识端）与地线短连接，减少寄生电感。
- 在焊盘下方或附近铺设适量铜箔并配合过孔（thermal vias）以增强散热能力，提升脉冲承受能力与可靠性。
- 保持 TVS 与被保护端口的走线尽量短，避免长回路引入额外感性反应。
五、选型与注意事项
- 反向截止电压 12V 适用于稳压或 12V 工作电压场合；若系统有较大持续反向偏压或动态过压，请确认 VBR 与系统最大工作电压匹配。
- 结电容 1.5 nF 较大，不推荐用于高速数据线（如 USB3、HDMI、LVDS）直接保护，适合电源线或低速信号。
- 若需更低泄漏或更低电容版本，可在 Leiditech 系列中比较其他型号以满足系统特性。
六、可靠性与合规
器件通过常见工业级防护测试标准（IEC 61000-4-2/-4/-5），工作温度范围宽，可用于严苛环境。为保证长期可靠性，建议在实际应用中做整机级别的脉冲测试（8/20 μs、1.2/50 μs 等）并评估钳位行为与热应力。
总结：PTVSHC3N12VU 在小型封装中提供较高的脉冲能量吸收与低泄漏特性，适合 12V 级电源与低速信号的瞬态保护。选择时需注意其较大的结电容对高速信号的影响，并在 PCB 布局与散热设计上给予足够重视。
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