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Leiditech FDMS86163P
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Leiditech FDMS86163P
- Type
- LEIDITECH
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LEIDITECH
- Electronic Component
- FDMS86163P
- Electronic Component
- 1
- Package
- DFN5x6-8L
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0262122653
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 140W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
FDMS86163P 产品概述
一、主要规格概览
FDMS86163P 为 Leiditech（雷卯电子）出品的 P 沟道功率 MOSFET，关键参数如下：
- 漏源耐压 Vdss：100V
- 连续漏极电流 Id：50A
- 导通电阻 RDS(on)：52mΩ @ 10V
- 阈值电压 Vgs(th)：2.5V @ 250µA
- 栅极总电荷 Qg：40nC @ 10V
- 输入电容 Ciss：2.12nF；反向传输电容 Crss：13pF；输出电容 Coss：194pF
- 最大耗散功率 Pd：140W
- 工作温度范围：-55℃ ～ +150℃
- 封装：DFN5x6-8L（小型低阻热阻封装）
二、器件特点与优势
FDMS86163P 在 100V 级别中提供较低的导通电阻与较高的电流承载能力，适合对功率密度和热性能要求较高的方案。DFN5x6-8L 封装在体积受限的 PCB 上能实现较好的热性能与布局紧凑性。较小的 Crss（13pF）有利于降低米勒效应引起的误导通，Q G=40nC 属中等水平，需考虑驱动能量和开关损耗。
三、典型应用场景
- 高侧负载开关与电源路径控制（无需额外电平转换驱动器）
- 反接保护 / 理想二极管与电源切换
- 电池管理与便携式电源电路
- DC-DC 拓扑中的高侧开关（中低频）与电机驱动的保护回路
- 工业电源与汽车电子（符合温度范围要求）
四、布局与驱动建议
- PCB 布局：为降低结-铜热阻，建议在封装下方和引脚处设计大面积散热铜箔并配合多孔过孔下穿至底层散热层。
- 驱动策略：P 沟道 MOSFET 在高侧应用可简化驱动，但需保证栅源电压达到额定驱动（典型 10V）以获得标称 RDS(on)。鉴于 Qg=40nC，驱动器需提供足够电流以缩短开关时间，或通过串联栅阻（10–47Ω）控制 dv/dt 与抑制振荡。
- 保护与滤波：在高 dv/dt 场合建议并联 TVS 或 RC 吸收网络，使用缓冲电阻和门极钳位防止误触发。
五、使用限制及对比考虑
P 沟道器件在高侧应用上能简化结构，但相对同等级 N 沟道 MOSFET 在导通损耗上可能不占优势（载流子迁移率差异）。若追求更低导通损耗并可接受额外驱动成本，使用 N 沟道 + 升压驱动可能更优。FDMS86163P 对于开关频率过高的场合需关注开关损耗与驱动功耗。
六、总结
FDMS86163P 以 100V / 50A 等级、52mΩ 的导通电阻与紧凑 DFN5x6-8L 封装，为高侧开关、功率路径管理与电源保护提供了平衡的电气与热性能。在设计时重视 PCB 散热、合适的栅驱以及转态能量管理，可发挥其在中高压应用中的优势。
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