WMSIC Electronic Components

LOWPOWER LP6451B6F

ModelLP6451B6F
PackageSOT-23-6
BrandLOWPOWER
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LOWPOWER LP6451B6F
Type
LOWPOWER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LOWPOWER
Electronic Component
LP6451B6F
Electronic Component
1
Package
SOT-23-6
Electronic Component
DC-DC Power Supply IC
Electronic Component
0.051g
Electronic Component
1
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0230814779
Operating Temperature
40℃~+85℃@(TA)
Operating Voltage
4.2V~18V
Switching Frequency
1.2MHz
Electronic Component
Electronic Component
Output Voltage
600mV~7V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LP6451B6F 产品概述

一、产品简介

LP6451B6F 是微源半导体(LOWPOWER)推出的一款高集成降压型同步整流 DC-DC 转换器。器件工作电压范围宽(4.2V~18V),输出电压可调(0.6V~7V),最大输出电流达 3A,内部集成开关管,并在 1.2MHz 的开关频率下工作,适合对体积、效率与成本有综合要求的便携与工业应用。封装为 SOT-23-6,工作环境温度范围为 -40℃~+85℃(TA),静态电流仅 440μA,适合电池供电系统的低功耗待机需求。

二、主要特点

  • 输入电压:4.2V ~ 18V,支持单节锂电及较宽的工业电源轨
  • 输出电压:可调 0.6V ~ 7V,参考内部基准 600mV
  • 最大输出电流:3A(实际可用电流与散热、布局及输入输出差有关)
  • 开关频率:1.2MHz,有利于使用小尺寸电感与陶瓷电容,降低整体方案体积
  • 同步整流:器件内置同步 MOSFET,无需外接肖特基二极管以提高效率
  • 静态电流:440μA,适合需低静态消耗的电池供电系统
  • 封装:SOT-23-6,便于小尺寸 PCB 设计与量产装配
  • 拓扑:降压式(降压型)、单通道、内置开关管、输出可调

三、典型应用

  • 手持设备与单节锂电池供电产品(移动设备、电池管理模块)
  • 工业控制与通信端设备(需宽输入范围的电源模块)
  • 便携式仪表、传感器供电及低功耗系统
  • 嵌入式主板的局部降压电源

四、设计要点与建议

  • 输出电压设定:采用外部分压电阻设定,典型关系式 VOUT = 0.6V × (1 + R1/R2),其中 0.6V 为参考基准电压。
  • 电感选择:由于 1.2MHz 的高开关频率,可使用体积小的低直流电阻(DCR)磁屏蔽电感。电感额定电流须大于或等于最大负载电流(3A),并考虑峰值电流与饱和特性。
  • 电容选择:建议使用低 ESR MLCC(陶瓷电容)作为输入与输出滤波,保证短路或瞬态时电压稳定。输出电容容量与等效串联电阻影响输出纹波与瞬态响应。
  • PCB 布局:输入电容应紧贴 VIN 与 GND 引脚放置,开关节点(SW)走线尽量短且远离敏感模拟信号。为降低热阻与噪声,尽量采用较大面积的接地铜箔,必要时在底层增加散热与接地。
  • 散热考虑:3A 输出条件下器件功耗与封装散热能力直接相关,高输入差压或高占空比下器件发热增大,应通过良好散热与合理布局保证可靠性。

五、可靠性与使用注意

  • 请参考制造商完整资料以确认器件在过流、短路、过温等异常条件下的保护特性与限制。
  • 在高温或满载条件下评估输出电流的热降额,保证长期可靠性。
  • 在设计阶段进行稳态与瞬态仿真,验证环路稳定性与相应补偿方案。

六、总结

LP6451B6F 以其宽输入电压、低静态电流、高开关频率与内部同步整流的特性,适合对体积、效率和成本有平衡需求的降压电源场景。SOT-23-6 小封装便于紧凑型设计,但在高电流工作条件下需要重视布局与散热设计。欲获得最佳性能与完整电气特性,请参照微源半导体提供的完整数据手册和参考设计。

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