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MICROCHIP SST25VF080B-50-4I-S2AF-T SST25VF080B
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MICROCHIP SST25VF080B-50-4I-S2AF-T
- Type
- MICROCHIP
- Minimum package
- 2100 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MICROCHIP
- Electronic Component
- SST25VF080B-50-4I-S2AF-T
- Electronic Component
- 1
- Package
- SOIC-8-208mil
- Electronic Component
- NOR FLASH
- Electronic Component
- 1.02g
- Electronic Component
- 1
- Electronic Component
- BM0228540192
- Electronic Component
- 8Mbit
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 2.7V~3.6V
- Current
- 5uA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 66MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SST25VF080B-50-4I-S2AF-T 产品概述
一、产品概要
SST25VF080B-50-4I-S2AF-T 是 MICROCHIP（美国微芯）旗下的一款 8Mbit 串行闪存器件（组织形式 1M x 8），采用 SPI 接口，封装为 SOIC-8-208mil。器件工作电压范围为 2.7V～3.6V，工业级工作温度范围为 -40℃ ～ +85℃，适合对可靠性和温度稳定性有要求的嵌入式及工业应用。
二、关键规格
- 存储容量：8 Mbit（1M x 8）
- 接口类型：SPI
- 时钟频率（fc）：66 MHz
- 工作电压：2.7V ～ 3.6V
- 待机电流：5 μA（典型）
- 擦写寿命：100,000 次
- 数据保存（TDR）：100 年
- 工作温度：-40℃ ～ +85℃
- 封装：SOIC-8-208mil
三、主要特性与优势
该器件为串行 NOR 型闪存，具备非易失性存储、高可靠性与低功耗待机特性。高擦写寿命（10^5 次）与长期数据保持（100 年）适合用于固件存储、启动代码、配置参数等需长期保存的数据。SPI 接口带来简单的总线连接与较低的引脚占用，便于与 MCU、FPGA 等主控器件集成。
四、典型应用场景
适用于嵌入式系统固件存储、引导代码（boot ROM）、设备配置与参数保存、数据记录设备、网络通信设备、消费电子、物联网终端以及工业控制等领域，尤其适合空间与成本受限但需可靠存储的场合。
五、设计与选型建议
- 供电与旁路：建议在 VCC 附近放置 0.1 μF 陶瓷旁路电容，以抑制瞬态噪声。
- 接口与时序：按主控器件 SPI 时序规范配置 CS、SCLK、MOSI、MISO，注意芯片写保护（WP）与保持（HOLD）引脚的状态管理。
- 擦写与写入：为延长寿命并提高效率，采用页写入与扇区管理策略；对频繁写入的数据应考虑上层的磨损均衡机制。
- EMC 与布局：SOIC-8 封装占板面积小，注意走线最短与地平面完整以保证信号完整性。
六、注意事项
在选型时确认工作频率与主控兼容（器件标称时钟频率如 66 MHz，应与系统时钟匹配）；高温或极端工况下应验证寿命及数据保持能力；量产前建议依据实际工况进行可靠性与写擦次数验证。
以上为基于器件基础参数的概述，便于快速评估 SST25VF080B-50-4I-S2AF-T 在具体设计中的适用性与注意点。若需引脚分配、时序图或应用电路示意，可提供更详尽的数据手册级别资料协助设计。
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