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MCC BZT52C3V9-TP BZT52C3V9
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MCC BZT52C3V9-TP
- Type
- MCC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MCC
- Electronic Component
- BZT52C3V9-TP
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.3g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 90Ω
- Electronic Component
- BM0227572865
- Diode
- 1
- Current(Ir)
- 3uA@1V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 3.7V~4.1V
- Electronic Component
- 65℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V9-TP 产品概述
一、产品基本特性
BZT52C3V9-TP 为美微科（MCC）生产的表面贴装齐纳二极管，标称稳压值 3.9V，公差 ±5%（实际稳压范围 3.7V～4.1V）。反向漏电流 Ir 为 3μA（@1V），直流耗散功率 Pd 按提供资料为 500mW（注：产品名称中曾出现 200mW 的描述，使用时请以原厂规格书为准）。动态阻抗 Zzt = 90Ω，k 折点阻抗 Zzk = 600Ω，工作结温范围 -65℃～+150℃，封装为 SOD-123，适合自动贴装工艺。
二、功能与典型应用
该器件定位为低功耗、小体积的稳压/钳位器件，适用于：
- 低电流电源的基准或参考电压源；
- 数字接口或模拟电路的过压钳位与浪涌保护；
- 便携设备与电池管理中对电压的简单限幅；
- 取代普通二极管做轻微稳压或偏置用途。 由于容差为 ±5% 且动态阻抗偏高，不建议用于需要高精度稳压的场合。
三、电气与热管理要点
- 功率耗散：请严格按原厂 Pd 和热阻条件考虑器件在实际环境下的允许电流与耗散，必要时在 PCB 上增加铜箔散热以降低结温。若资料中出现 Pd 差异（200mW vs 500mW），以最新官方数据为准，避免过载导致结温超限。
- 动态阻抗：Zzt=90Ω 表示在工作电流变化时，稳压值会随电流显著移动，设计时需保证工作电流稳定或在可接受范围内。
- 反向泄漏：Ir=3μA（@1V）表明在低压工况下漏电较小，但在精密低电流应用仍需考虑其对电路偏置的影响。
四、封装与安装建议
SOD-123 小型贴片封装，通常带有阴极方向标识（环带）。推荐采用回流焊工艺，遵循元件最高结温和回流曲线。布局时保持周围铜箔尽量均匀以利散热，并参考厂家推荐的焊盘尺寸与过孔布局以保证焊接可靠性。
五、测试与选型建议
- 测试稳压值应在厂家规定的测试电流条件下进行，离开测试电流读取的稳压值可能有偏差。
- 若需更低阻抗或更精确稳压，考虑选择低阻抗或更高功率级别的齐纳/稳压芯片。
- 在电路仿真或验证阶段，关注温度漂移与动态阻抗带来的稳压波动，必要时增加串联电阻或使用有源稳压方案。
六、总结
BZT52C3V9-TP 为一款适合通用低功率稳压与钳位的 SOD-123 齐纳二极管，特点是体积小、易贴装、适用广泛。选型时请以最新 MCC 原厂数据为准，合理评价其功率限值与动态特性，以确保在目标应用中稳定可靠。
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