WMSIC Electronic Components

MCC BC848BHE3-TP BC848BHE3

ModelBC848BHE3-TP
PackageSOT-23
BrandMCC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Option 137516

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MCC BC848BHE3-TP
Type
MCC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MCC
Electronic Component
BC848BHE3-TP
Electronic Component
1
Package
SOT-23
Electronic Component
Transistor(BJT)
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM0264862569
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
100mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC848BHE3-TP 产品概述

一、概述

BC848BHE3-TP 是一款由 MCC(美微科)提供的通用 NPN 小信号晶体管,面向汽车级与工业级应用。器件采用 SOT-23 三引脚封装,采用卷带盘装(T/R),适合贴片自动化生产。器件设计兼顾开关与放大功能,具有较高的直流增益与良好的频率特性,适用于信号放大、驱动与开关隔离等场景。

二、主要参数

  • 晶体管类型:NPN
  • 集电极电流 Ic:100 mA(最大)
  • 集射极击穿电压 Vceo:30 V(最大)
  • 功耗 Pd:225 mW(封装额定耗散,注意随温度降额)
  • 直流电流增益 hFE:200(典型)
  • 特征频率 fT:100 MHz(典型)
  • 集电极截止电流 Icbo:100 nA(典型/最大量级)
  • 集电极饱和电压 VCE(sat):500 mV(典型/条件相关)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23,3 引脚,T/R(卷盘)

三、特点与优势

  • 宽温度工作范围(-55℃ 至 +150℃),满足汽车级及严苛工业环境要求。
  • 较高的直流增益(hFE≈200),利于小信号放大及低偏流驱动场合,能降低基极驱动电流需求。
  • 特征频率高达 100 MHz,适合中高频小信号放大与开关应用。
  • 低集电极截止电流(Icbo≈100 nA),有利于高阻抗电路和低漏电场合。
  • 小型 SOT-23 封装,便于高密度 PCB 布局与自动化贴装。

四、封装与引脚

器件为标准 SOT-23 三引脚封装并以卷带盘(T/R)方式供货,便于 SMT 贴装生产。具体引脚排列(基极/集电极/发射极)可能随封装方向或生产批次而异,请在设计与替换时参照厂家规格书确认引脚定义与焊盘尺寸。

五、典型应用

  • 汽车电子:传感器前端、信号调理、电平移位与驱动微小负载
  • 工业控制:逻辑接口、开关驱动、放大器输入级
  • 消费电子:开关电路、低功率驱动、射频前端的中高频放大
  • 通信设备:中频放大与缓冲,利用其 100 MHz 特性处理较高频率信号

六、使用建议与注意事项

  • 功耗管理:Pd=225 mW 为封装在标准测试条件下的额定耗散,实际电路中需按环境温度做降额处理并通过合适的铜箔散热或减小VCE来控制结温。
  • 饱和与驱动:VCE(sat)≈500 mV 属典型值,实际取决于基极驱动电流,设计开关电路时应留有余量。
  • 器件保护:避免长时间工作在最大额定电流/电压条件,注意反向电压与浪涌电流保护;在高湿或敏感工序中按制造商推荐处理以防潮湿或静电损伤。
  • 验证与替换:虽与市场上其他通用 NPN(如 BC848 系列)功能接近,但在替换时应对比 Vceo、hFE、Pd、工作温度与封装引脚,必要时参考完整数据手册进行等效验证。

七、采购与资料

BC848BHE3-TP 以 SOT-23 T/R 形式供应,适合批量 SMT 生产。建议在采购与设计阶段索取 MCC 官方的数据手册(含典型特性曲线、引脚图、封装外形与焊接温度曲线),以保证在实际应用中的可靠性与一致性。常见替代器件需谨慎比对参数差异,尤其是功耗、温度等级与引脚定义。

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