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MDD ES3DB
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD ES3DB
- Type
- MDD
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- ES3DB
- Electronic Component
- 1
- Package
- SMB
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.335g
- Electronic Component
- 1
- Electronic Component
- BM0226511006
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 5uA@200V
- (Vf)
- 1.25V@3A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES3DB 产品概述
一、概要介绍
ES3DB 为 MDD 推出的独立式快恢复/高效率整流二极管，采用 SMB（DO‑214AA）封装，面向中等功率开关电源与整流应用。器件额定整流电流为 3A，非重复峰值浪涌电流高达 90A，反向耐压 200V，结温工作范围宽 (-55℃ ~ +150℃)，适合在苛刻电气与温度条件下使用。
二、电气性能要点
- 额定整流电流（Io）：3A（连续）
- 非重复峰值浪涌电流（Ifsm）：90A
- 直流反向耐压（Vr）：200V
- 正向压降（Vf）：典型约 0.95V @ 3A，规格最大值可达 1.25V @ 3A（以最终规格书为准）
- 反向电流（Ir）：最大 5µA @ 200V
- 反向恢复时间（Trr）：约 35ns
- 工作结温（Tj）：-55℃ ~ +150℃
这些参数表明 ES3DB 在中等电流和中高电压场景下可提供较低导通损耗与较快恢复特性，兼顾效率与抗冲击能力。
三、封装与热管理
SMB 封装体积小，适合集成在中密度 PCB 上。建议在 PCB 设计时：
- 在阳极/阴极焊盘下方与周围做大面积铺铜并通过多点过孔与散热层相连，以降低结-周围散热阻抗；
- 保持良好的焊接热回流工艺以确保焊点可靠性；
- 对于频繁冲击或长时间大电流工作场合，应进行热仿真并考虑加装散热片或风冷。
四、典型应用
- 开关电源（整流与续流）
- DC-DC 转换器输出整流
- 电机驱动、逆变器的回流二极管
- 通用整流、保护电路（续流、防反接） 其快恢复特性使其在高开关频率下仍能保持较低开关损耗与较小的电磁干扰。
五、选型与使用建议
- 若对导通损耗有更严格要求，请以典型 Vf 值作为基准，并结合工作温度进行功耗计算；若在高温下长期工作，应留有充分的电流降额。
- 在有重复浪涌或较大重复脉冲的场合，注意 Ifsm 为非重复峰值，应检查是否需要更高峰值能力或并联降阻。
- 关注反向恢复时间 Trr 与电路开关速度的匹配，较短的 Trr 有利于降低开关损耗与 EMI，但在某些拓扑中需配合吸收元件抑制尖峰。
六、可靠性与储运
- 存储时避免潮湿及高温高湿环境；若采用卷盘或托盘包装，应遵循行业级别防潮要求，必要时进行回流前干燥处理。
- 安装过程遵循标准焊接曲线，避免长时间过高回流温度导致封装应力或性能退化。
总结：ES3DB 在 SMB 封装下提供 200V / 3A 的稳健整流能力，兼具较低正向压降与较快恢复时间，适用于多种中功率、高频开关场景。最终选型与热设计应以器件最终规格书为准，并结合实际工作条件进行验证。
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