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MDD ES1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD ES1G
- Type
- MDD
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- ES1G
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.09g
- Electronic Component
- 1
- Electronic Component
- BM0227798487
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@400V
- (Vf)
- 1.25V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1G 快恢复/高效率二极管产品概述
一、产品简介
ES1G 为 MDD 品牌的独立式快恢复整流二极管，封装为 SMA（表面贴装），额定整流电流 1A，直流反向耐压 400V。该器件在 1A 工作电流下正向压降典型值为 1.25V，反向漏电流在 Vr=400V 时为 5μA，反向恢复时间 Trr≈35ns，允许结温范围 -55℃ 至 +150℃。整体设计兼顾开关损耗与导通损耗，适用于中等频率开关电源和整流场合。
二、关键参数与工程意义
- 正向压降 Vf=1.25V@1A：导通损耗主要由 Vf 决定，1.25V 在同类快恢复整流器中属于常见水平，适用于要求效率但对导通损耗容忍度中等的应用。
- 反向耐压 Vr=400V：可满足 220VAC 整流后高压总线及多数工业电源的耐压需求。
- 反向电流 Ir=5μA@400V：低漏电流有利于降低待机能耗与提高高阻态下的稳定性。
- 反向恢复时间 Trr=35ns：较短的恢复时间可减少开关时的峰值电流和开关损耗，但在高速开关环境下仍需配合合适的布局与阻尼。
- 工作结温范围 -55~+150℃：适应宽温度环境，利于可靠性和寿命设计。
三、主要优势
- 快恢复特性可降低开关损耗与电磁干扰（相较于慢恢复整流器）。
- SMA 小型表贴封装，便于自动化贴装，节省 PCB 面积。
- 低反向漏流适合待机、测量等对微小漏电流敏感的电路。
- 宽温范围和工业级耐压使其在电源、照明等场景具有良好的环境适应性。
四、典型应用场景
- 开关电源整流和续流（二极管桥或单个续流管）。
- LED 驱动电路以及电源适配器次级整流。
- 工业控制电源、充电器和电池保护电路。
- 保护二极管、反向保护及脉冲整流场合。
五、选型与使用建议
- 若追求更低导通损耗且工作电压允许，可考虑肖特基二极管；若需更低 Trr 或更高电流，则选用更高规格型号。
- 在高 dv/dt 或高频开关场合，应注意布局减少寄生电感，并可并联阻尼或 RC 抑制回冲脉冲，防止开关尖峰造成额外损耗或电磁干扰。
- 参考封装热阻，保证 PCB 散热铜箔足够，推荐在阳极/阴极附近布置散热铜皮以降低结温；实际电流长期工作应按额定电流和允许结温余量计算。
- 焊接与回流按通用 SMA 工艺规范执行，避免过高回流温度和过长保温时间以保证可靠性。
六、小结
ES1G 为一种面向中等电流与中高电压应用的快恢复整流二极管，结合 400V 耐压、35ns 恢复时间和 1A 额定电流，适用于开关电源、LED 驱动及各种整流/续流场合。合理的电路布局与热管理可充分发挥其效率与可靠性优势。若需更详细的电气特性曲线或封装尺寸与回流曲线，建议查阅厂家数据手册或索取样片进行实测验证。
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