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MSKSEMI MS50N06
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI MS50N06
- Type
- MSKSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- MS50N06
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.442g
- Electronic Component
- 1
- Electronic Component
- BM0219847448
- Power Dissipation(Pd)
- 65W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 1.68nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MS50N06 产品概述
一、概述
MSKSEMI（美森科）的MS50N06是一款高性能的N通道增强型MOSFET，采用TO-252封装。作为功率MOSFET中的佼佼者，MS50N06在电源管理、DC-DC转换器、马达驱动等各种应用中均表现出色。其优异的导通电阻、快速的开关特性和较高的电流承受能力，使得MS50N06成为现代电子设计中的理想选择。
二、主要特性
高导通电流能力：MS50N06的最大连续漏电流可达50A，适合大功率应用。
低导通电阻：该器件在VGS = 10V时的最大导通电阻仅为0.025Ω（典型值），降低了导通时的能量损耗，提高了效率。
宽工作电压范围：MS50N06的耐压值最高可达60V，适合多种电压等级的应用场景。
快速开关特性：其开关速度快，适合高频开关电源和PWM控制，能够有效减少开关损耗。
良好的热管理能力：TO-252封装具有良好的热散性能，确保在高功率工作状态下依然保持稳定运行。
三、应用领域
电源管理：MS50N06广泛应用于开关电源（SMPS）、DC-DC变换器及其他形式的电源管理解决方案中，强调高效能与降低能损的设计需求。
马达驱动：该MOSFET适用于直流马达和无刷马达驱动电路，能够提供高效的驱动电流。
照明控制：在LED驱动和照明控制模块中，该元件的低导通电阻和高效率使其成为理想选择。
汽车电子：在电动汽车及相关电子系统中，MS50N06可用作电源开关和马达控制，满足高电流和高效率的需求。
工业设备：例如在自动化和控制系统中，使用该MOSFET来控制重载和高电流的应用，确保系统的高效和稳定。
四、技术规格
- 型号：MS50N06
- 封装：TO-252
- 最大漏极源间电压 (VDS)：60V
- 最大持续漏极电流 (ID)：50A
- 最大脉冲漏极电流 (IDM)：100A
- 导通电阻 (RDS(on))：0.025Ω（VGS=10V时，典型值）
- 门极阈值电压 (VGS(th))：2-4V
- 工作温度范围：-55°C 至 150°C
五、封装特性
TO-252封装的优势在于其良好的散热性能和较小的占板面积。该封装使得MOSFET可以适应较高的电流和功率要求，同时简化了电路设计过程。其较大的封装尺寸为设计者提供了灵活的焊接和布局选项，从而提高了生产的便捷性。
六、总结
MS50N06 MOSFET凭借其卓越的性能和广泛的应用领域，成为市场上受欢迎的电子元器件之一。无论是在电力电子行业还是消费类电子产品中，MS50N06都以其高效能和稳定性满足了设计者的需求。对于寻求高功率、高效能解决方案的工程师而言，MS50N06无疑是一个值得考虑的重要组件。
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