WMSIC Electronic Components

MSKSEMI AON6407-MS AON6407

ModelAON6407-MS
PackageDFN5x6-8L
BrandMSKSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MSKSEMI AON6407-MS
Type
MSKSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MSKSEMI
Electronic Component
AON6407-MS
Electronic Component
1
Package
DFN5x6-8L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.127g
Electronic Component
1
Electronic Component
BM0257677012
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
120W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AON6407-MS 产品概述

一、概述

AON6407-MS 为 P 沟道功率 MOSFET,额定漏源电压 Vdss 30V,适合中低压高侧开关与电源路径管理。器件在 |Vgs|≈4.5V 时表现良好,针对便携与车载辅助电源、负载切换与反向保护等场合具有较高的实用性。

二、主要性能亮点

  • 漏源电压:30V
  • 连续漏极电流:100A(器件极限,实际应用需依据封装散热与 PCB 设计)
  • 导通电阻:6mΩ @ |Vgs|=4.5V(测试电流 15A 条件下)
  • 阈值电压:Vgs(th) ≈ 2.5V(250µA 测试参考)
  • 总栅极电荷 Qg:60nC @10V,输入电容 Ciss:3.45nF,Crss:140pF,Coss:255pF
  • 功耗能力 Pd:120W(需配合良好散热)
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:DFN5x6-8L,品牌:MSKSEMI(美森科)

三、典型应用场景

  • 电池供电系统的高侧开关与电源切换
  • 便携设备、通信设备的负载隔离与省电管理
  • 逆向电流保护(取代肖特基二极管的理想二极管实现)
  • 电源路径分流与短路限流(需与限流电路配合)

四、驱动与开关性能提示

由于器件为 P 沟道,开通时需使栅极相对源极产生负 Vgs,|Vgs|≈4.5V 可达到标称 Rds(on)。Qg=60nC、Ciss=3.45nF 表明栅极电容较大,驱动速度和驱动电流要求较高,建议使用能提供足够峰值电流的驱动器或在门极串联 10~47Ω 阻值以控制 dv/dt 与振铃。Crss(140pF)影响开关损耗与回流行为,快开关时应注意能量回收与吸收路径设计。

五、封装与散热建议

DFN5x6-8L 封装利于面积受限的应用,但对散热依赖 PCB 大面积铜箔和过孔联通底部散热垫。建议:

  • 在 PCB 底层并联多层铜箔导热,使用热过孔连接至内层/底层散热平面;
  • 留出足够的焊盘面积并使用热焊盘焊接;
  • 在高电流应用中进行温升评估并按需降低占空比或并联器件。

六、选型与注意事项

  • 标称 100A 为器件极限或短时能力,持续电流能力受 PCB 散热与环境温度限制,设计时应考虑热阻和 SOA。
  • 栅极驱动电压应参考厂家完整数据表以确保 Vgs 不被超过;避免在未知条件下直接施加超过封装/工艺允许的电压。
  • 高速切换时关注 EMI、浪涌电流与吸收元件选型(缓冲电阻、RC 或 TVS)。

七、结论

AON6407-MS 是一款适合 30V 级高侧/负载管理的 P 沟道功率 MOSFET,具有低 Rds(on) 与较大的电流能力。在布局与驱动匹配、热管理做到位的前提下,可为便携电源、理想二极管与电源路径切换提供高效解决方案。购买与应用前建议参照厂方完整数据手册并做功率与热仿真验证。

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